메뉴 건너뛰기




Volumn 6, Issue 1, 2016, Pages 309-312

960-mV open-circuit voltage chalcopyrite solar cell

Author keywords

Cu(In,Ga)S2; high open circuit voltage; KCN free process

Indexed keywords

ETCHING; GALLIUM; OPEN CIRCUIT VOLTAGE; SULFUR COMPOUNDS;

EID: 84943608010     PISSN: 21563381     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOTOV.2015.2479470     Document Type: Article
Times cited : (21)

References (15)
  • 2
    • 84873702173 scopus 로고    scopus 로고
    • CdS/Cu(In,Ga)S2 based solar cells with efficiencies reaching 12.9% prepared by a rapid thermal process
    • S. Merdes., et al. CdS/Cu(In,Ga)S2 based solar cells with efficiencies reaching 12.9% prepared by a rapid thermal process. Prog. Photovoltaics, Res. Appl., vol. 21, pp. 88-93, 2013
    • (2013) Prog. Photovoltaics Res. Appl , vol.21 , pp. 88-93
    • Merdes, S.1
  • 6
    • 85027926686 scopus 로고    scopus 로고
    • High efficiency Cu2 ZnSn(S,Se)4 solar cells by applying a double In2 S3 /CdS emitter
    • J. Kim., et al. High efficiency Cu2 ZnSn(S,Se)4 solar cells by applying a double In2 S3 /CdS emitter. Adv. Mater., vol. 26, pp. 7427-7431, 2014
    • (2014) Adv. Mater , vol.26 , pp. 7427-7431
    • Kim, J.1
  • 8
    • 84905695421 scopus 로고    scopus 로고
    • Single-crystal CdTe solar cells with Voc greater than 900 mV
    • 053903-1-053903-4 Aug
    • J. N. Duenow., et al. Single-crystal CdTe solar cells with Voc greater than 900 mV. Appl. Phys. Lett., vol. 105, no. 5, pp. 053903-1-053903-4, Aug. 2014
    • (2014) Appl. Phys. Lett , vol.105 , Issue.5
    • Duenow, J.N.1
  • 11
    • 84903317739 scopus 로고    scopus 로고
    • Structural tuning of wide-gap chalcopyrite CuGaSe2 thin films and highly efficient solar cells: Differences from narrow-gap Cu(In,Ga)Se2 . Prog. Photovoltaics
    • S. Ishizuka., et al. Structural tuning of wide-gap chalcopyrite CuGaSe2 thin films and highly efficient solar cells: Differences from narrow-gap Cu(In,Ga)Se2 . Prog. Photovoltaics, Res. Appl., vol. 22, no. 7, pp. 821-829, 2014
    • (2014) Res. Appl , vol.22 , Issue.7 , pp. 821-829
    • Ishizuka, S.1
  • 12
    • 78751644359 scopus 로고    scopus 로고
    • 12.6% efficient CdS/Cu(In,Ga)S2 based solar cell with an open circuit voltage of 879 mV prepared by a rapid thermal process
    • S. Merdes., et al. 12.6% efficient CdS/Cu(In,Ga)S2 based solar cell with an open circuit voltage of 879 mV prepared by a rapid thermal process. Sol. Energy Mater. Sol. Cells, vol. 95, pp. 864-869, 2011
    • (2011) Sol. Energy Mater. Sol. Cells , vol.95 , pp. 864-869
    • Merdes, S.1
  • 13
    • 65649119398 scopus 로고    scopus 로고
    • Increased open circuit voltage in Cu(In,Ga)S2 based solar cells prepared by rapid thermal processing of metal precursors
    • S. Merdes., et al. Increased open circuit voltage in Cu(In,Ga)S2 based solar cells prepared by rapid thermal processing of metal precursors Proc. 23rd Eur. Photovoltaic Sol. Energy Conf., Valencia, Spain, 2008, pp. 2588-2591
    • (2008) Proc. 23rd Eur. Photovoltaic Sol. Energy Conf., Valencia, Spain , pp. 2588-2591
    • Merdes, S.1
  • 14
    • 0033317520 scopus 로고    scopus 로고
    • Improved efficiency of CuInS2 -based solar cells without potassium cyanide process
    • T. Watanabe and M. Matsui. Improved efficiency of CuInS2 -based solar cells without potassium cyanide process. Jpn. J. Appl. Phys., vol. 38, pp. L1379-L1381, 1999
    • (1999) Jpn. J. Appl. Phys , vol.38 , pp. L1379-L1381
    • Watanabe, T.1    Matsui, M.2
  • 15
    • 0033875346 scopus 로고    scopus 로고
    • Study of the effect of gallium grading in Cu(In,Ga)Se2
    • T. Dullweber., et al. Study of the effect of gallium grading in Cu(In,Ga)Se2 . Thin Solid Films, vols. 361/362, pp. 478-481, 2000
    • (2000) Thin Solid Films , vol.361-362 , pp. 478-481
    • Dullweber, T.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.