High efficiency Cu2ZnSn(S,Se)4 solar cells by applying a double in 2S3/CdS Emitter

Advanced Materials

Volumn 26, Issue 44, 2014, Pages 7427-7431

  Kim, Jeehwan ^a   Hiroi, Homare ^b   Todorov, Teodor K ^a   Gunawan, Oki ^a   Kuwahara, Masaru ^c   Gokmen, Tayfun ^a   Nair, Dhruv ^a   Hopstaken, Marinus ^a   Shin, Byungha ^a,d   Lee, Yun Seog ^a   Wang, Wei ^a   Sugimoto, Hiroki ^b   Mitzi, David B ^a,e  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b Central Research and Development Laboratory   (Japan)

^c TOKYO OHKA KOGYO CO LTD   (Japan)

^d Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^e Duke University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CADMIUM SULFIDE; CARRIER CONCENTRATION; EFFICIENCY; II-VI SEMICONDUCTORS; SELENIUM COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SOLAR CELLS;

BUILT-IN POTENTIAL; DOPING CONCENTRATION; DOUBLE-EMITTER; HIGH-EFFICIENCY; MINORITY CARRIER LIFETIMES; P-N JUNCTION; SINGLE EMITTER; SOLAR CELL TECHNOLOGY;

SULFUR COMPOUNDS;

EID: 85027926686     PISSN: 09359648     EISSN: 15214095     Source Type: Journal    
DOI: 10.1002/adma.201402373     Document Type: Article

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