The defect-induced fracture behaviors of hexagonal boron-nitride monolayer nanosheets under uniaxial tension

Journal of Physics D: Applied Physics

Volumn 48, Issue 37, 2015, Pages

  Qi Lin, Xiong ^a,b   Zhen Huan, Li ^a,b   Xiao Geng, Tian ^c  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b HUBEI KEY LABORATORY OF ENGINEERING STRUCTURAL ANALYSIS AND SAFETY ASSESSMENT   (China)

^c XI'AN JIAOTONG UNIVERSITY   (China)

Author keywords

atomistic anti site defect; boron nitride monolayer nanosheet; fracture behavior; molecular dynamics simulation; Stone Wales defect; vacancy defect

Indexed keywords

BORON NITRIDE; DEFECTS; FRACTURE MECHANICS; FRACTURE TOUGHNESS; MOLECULAR DYNAMICS; MONOLAYERS; NANOSHEETS; NITRIDES; POINT DEFECTS; VACANCIES;

ANTI-SITE DEFECT; FRACTURE BEHAVIOR; MOLECULAR DYNAMICS SIMULATIONS; STONE-WALES DEFECTS; VACANCY DEFECTS;

FRACTURE;

EID: 84941218796     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/48/37/375502     Document Type: Article

References (36)

1. Yang B C, Wang S W, Guo Y Z, Yuan J Y, Si Y B, Zhang S R and Chen H Y 2014 Rsc. Adv. 4 54677-83
2. He L C, Guo S S, Lei J C, Sha Z D and Liu Z S 2014 Carbon 75 124-32
3. Han J, Ryu S, Sohn D and Seyoung I 2014 Carbon 68 250-7
4. Gabriele T, Laurent J and Angelos M 2014 Nano Lett. 14 6872-7
5. Singh S K, Neek-Amal M, Costamagna S and Peeters F M 2013 Phys. Rev. B 87 184106
6. Li X L, Wu X J, Zeng X C and Yang J L 2012 Acs Nano 6 4104-12
7. Li H and Zeng X C 2012 ACS Nano 6 2401-9
8. Li N N, Sha Z D, Pei Q X and Zhang Y W 2014 J. Phys. Chem. C 118 13769-74
9. Sun Y J, Ma F, Huang Y H, Hu T W, Xu K W and Chu P K 2013 Appl. Phys. Lett. 103 191906
10. Zhang J F, Zhao J J and Lu J P 2012 Acs Nano 6 2704-11
11. Dai J, Wu X J, Yang J L and Zeng X C 2013 J. Phys. Chem. Lett. 4 3484-8
12. Ding N, Chen X F, Wu C L and Li H 2013 Phys. Chem. Chem. Phys. 15 10767-76
13. Kovtyukhova N I, Wang Y X, Lv R T, Terrones M, Crespi V H and Mallouk T E 2013 J. Am. Chem. Soc. 135 8372-81
14. Yuan J and Liew K M 2014 Phys. Chem. Chem. Phys. 16 88-94
15. Bernardi M, Palummo M and Grossman J C 2012 Phys. Rev. Lett. 108 226805
16. Kudin K N, Scuseria G E and Yakobson B I 2001 Phys. Rev. B 64 235406
17. Topsakal M and Ciraci S 2010 Phys. Rev. B 81 024107
18. Peng Q, Ji W and De S 2012 Comput. Mater. Sci. 56 11
19. Li C, Bando Y, Zhi C Y, Huang Y and Golberg D 2009 Nanotechnology 20 385707
20. Mortazavi B and Remond Y 2012 Physica E 44 1846-52
21. Mortazavi B and Cuniberti G 2014 Rsc. Adv. 4 19137-43
22. Han T W, Luo Y and Wang C Y 2014 J. Phys. D: Appl. Phys. 47 025303
23. Minh-Quy L and Danh-Truong N 2014 Mater. Sci. Eng. A 615 481-8
24. Miller M and Owens F J 2013 Chem. Phys. Lett. 570 42-5
25. Xiao B, Yu X F and Ding Y H 2014 Rsc. Adv. 4 22688-96
26. Sun Y J, Ma F, Ma DY, Xu K W and Chu P K 2012 J. Phys. D: Appl. Phys. 45 305303
27. Slotman G J and Fasolino A 2013 J. Phys.: Condens. Matter 25 045009
28. Hong J H et al 2015 Nat. Commun. 6 6293
29. Tersoff J 1988 Phys. Rev. B 37 6991-7000
30. Tersoff J 1989 Phys. Rev. B 39 5566-8
31. Tersoff J 1988 Phys. Rev. Lett. 61 2879-82
32. Alper K, Haskins J B, Sevik C and Çaʇin T 2012 Phys. Rev. B 86 115410
33. Paetzold P 1991 Pure. Appl. Chem. 63 345-50
34. Plimpton S 1995 J. Comput. Phys. 117 1-19
35. Hoover W G 1985 Phys. Rev. A 31 1695-7
36. Zhao S and Xue J 2013 J. Phys. D: Appl. Phys. 46 135303