Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride

Journal of Physical Chemistry Letters

Volumn 6, Issue 18, 2015, Pages 3610-3614

  Ande, Chaitanya Krishna ^a   Knoops, Harm C M ^a,b   De Peuter, Koen ^a   Van Drunen, Maarten ^a   Elliott, Simon D ^c   Kessels, Wilhelmus M M ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b OXFORD INSTRUMENTS PLASMA TECHNOLOGY   (United Kingdom)

^c UNIVERSITY COLLEGE CORK   (Ireland)

Author keywords

adsorption; DFT; mechanism; passivation; plasma; simulation

Indexed keywords

ADSORPTION; CALCULATIONS; DEPOSITION; MECHANISMS; NITRIDES; PASSIVATION; PLASMAS; SILICON; SILICON NITRIDE; TEMPERATURE; THIN FILMS;

DFT; FIRST-PRINCIPLES CALCULATION; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; PRECURSOR ADSORPTION; REDUCED GROWTH RATE; SILICON PRECURSORS; SIMULATION; SURFACE TERMINATION;

ATOMIC LAYER DEPOSITION;

EID: 84941102107     PISSN: None     EISSN: 19487185     Source Type: Journal    
DOI: 10.1021/acs.jpclett.5b01596     Document Type: Article

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