Characterization of low-temperature silicon nitride LPCVD from bis(tertiary-butylamino)silane and ammonia

Journal of the Electrochemical Society

Volumn 151, Issue 5, 2004, Pages

  Gumpher, John ^a   Bather, Wayne ^b   Mehta, Narendra ^b   Wedel, Darin ^b  

^a TOKYO ELECTRON AMERICA INC   (United States)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; CARBON; CHEMICAL VAPOR DEPOSITION; DEPOSITION; ETCHING; HYDROGEN; LOW TEMPERATURE PHENOMENA; MASS TRANSFER; MOSFET DEVICES; SUBSTITUTION REACTIONS;

DEPOSITION RATES; ETCH RESISTANCE; FILM THICKNESS; LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD);

SILICON NITRIDE;

EID: 2942532299     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1690294     Document Type: Article

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