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Journal of Materials Chemistry C

Volumn 3, Issue 35, 2015, Pages 9069-9075

High thermoelectric performance of a defect in α-In2Se3-based solid solution upon substitution of Zn for in

(5) Cui, Jiaolin a Wang, Li a,b Du, Zhengliang a Ying, Pengzhan b Deng, Yuan c

a NINGBO UNIVERSITY OF TECHNOLOGY (China)

b CHINA UNIVERSITY OF MINING AND TECHNOLOGY (China)

c BEIHANG UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; DEFECTS; POINT DEFECTS; THERMOELECTRICITY; ZINC;

ANTI-SITE DEFECT; ELECTRICAL CONDUCTIVITY; FABRICATION TECHNOLOGIES; FIGURE OF MERITS; LATTICE STRUCTURES; LATTICE THERMAL CONDUCTIVITY; ORDERS OF MAGNITUDE; THERMOELECTRIC PERFORMANCE;

SOLID SOLUTIONS;

EID: 84940510752 PISSN: 20507534 EISSN: 20507526 Source Type: Journal
DOI: 10.1039/c5tc01977j Document Type: Article

Times cited : (34)

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