Crystal structure and elementary electronic properties of Bi-stabilized α-In2Se3

Materials Research Bulletin

Volumn 48, Issue 7, 2013, Pages 2517-2521

  Ji, Huiwen ^a   Reijnders, Anjan ^b   Liang, Tian ^a   Schoop, L M ^a   Burch, K S ^b   Ong, N P ^a   Cava, R J ^a  

^a PRINCETON UNIVERSITY   (United States)

^b UNIVERSITY OF TORONTO   (Canada)

Author keywords

A. Chalcogenides; A. Optical materials; C. X ray diffraction; D. Electrical properties; D. Optical properties

Indexed keywords

CONDUCTION-BAND STATE; ELECTRONIC STRUCTURE CALCULATIONS; HALL EFFECT MEASUREMENT; INDIRECT BAND GAP; OPTICAL MEASUREMENT; POSITIONAL DISORDER; SINGLE CRYSTAL X-RAY DIFFRACTION; VALENCE BAND STATE;

CHALCOGENIDES; CRYSTAL GROWTH; CRYSTAL STRUCTURE; ELECTRIC PROPERTIES; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; OPTICAL DATA PROCESSING; TIN; X RAY DIFFRACTION;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 84877580662     PISSN: 00255408     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.materresbull.2013.03.002     Document Type: Article

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