Bandgap reduction responsible for the improved thermoelectric performance of bulk polycrystalline In2-xCuxSe3 (x = 0-0.2)

Journal of Applied Physics

Volumn 110, Issue 2, 2011, Pages

  Cui, Jiaolin ^a   Liu, Xianglian ^a   Zhang, Xiaojun ^b   Li, Yiyun ^c   Deng, Yuan ^d  

^a NINGBO UNIVERSITY OF TECHNOLOGY   (China)

^b CHINA UNIVERSITY OF MINING AND TECHNOLOGY   (China)

^c TAIYUAN UNIVERSITY OF TECHNOLOGY   (China)

^d BEIHANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS-LIKE; BAND GAP REDUCTION; DIMENSIONLESS FIGURE OF MERIT; INDIUM ATOMS; LATTICE THERMAL CONDUCTIVITY; PACKED ARRAYS; PARTIAL CRYSTALLIZATION; POLYCRYSTALLINE; POWER FACTORS; THERMOELECTRIC PERFORMANCE; TWO LAYERS;

ELECTRIC POWER FACTOR; ENERGY GAP; INDIUM; SELENIUM; SEMICONDUCTING INDIUM;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 79961101514     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3609067     Document Type: Article

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