Junction formation and current transport mechanisms in hybrid n-Si/PEDOT:PSS solar cells

Scientific Reports

Volumn 5, Issue , 2015, Pages

  Jäckle, Sara ^a,b   Mattiza, Matthias ^a   Liebhaber, Martin ^a   Brönstrup, Gerald ^a,b   Rommel, Mathias ^c   Lips, Klaus ^a   Christiansen, Silke ^a,b  

^a HAHN MEITNER INSTITUT   (Germany)

^b MAX PLANCK INSTITUTE FOR THE SCIENCE OF LIGHT   (Germany)

^c FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84939509303     PISSN: None     EISSN: 20452322     Source Type: Journal    
DOI: 10.1038/srep13008     Document Type: Article

References (43)

1. Shirakawa, H., Louis, E. J., MacDiarmid, A. G., Chang, C. K. & Heeger, A. J. Synthesis of Electrically Conducting Organic Polymers : Halogene Derivatives of Polyacetylene, (CH)x. J. C. S. Chem. Comm 578-580 (1977).
2. Xia, Y., Sun, K. & Ouyang, J. Solution-processed metallic conducting polymer films as transparent electrode of optoelectronic devices. Adv. Mater. 24, 2436-2440 (2012).
3. Kirchmeyer, S. & Reuter, K. Scientific importance, properties and growing applications of poly(3,4-ethylenedioxythiophene). J. Mater. Chem. 15, 2077 (2005).
4. Pietsch, M., Bashouti, M. Y. & Christiansen, S. The Role of Hole Transport in Hybrid Inorganic/Organic Silicon/Poly(3,4-ethylenedioxy-thiophene):Poly(styrenesulfonate) Heterojunction Solar Cells. J. Phys. Chem. C 117, 9049-9055 (2013).
5. Kim, J. Y., Jung, J. H., Lee, D. E. & Joo, J. Enhancement of electrical conductivity by a change of solvents. Synth. Met. 126, 311-316 (2002).
6. MacDiarmid, A. G. & Epstein, A. J. The concept of secondary doping as applied to polyaniline. Synth. Met. 65, 103-116 (1994).
7. Price, M. J., Foley, J. M., May, R. A. & Maldonado, S. Comparison of majority carrier charge transfer velocities at Si/polymer and Si/metal photovoltaic heterojunctions. Appl. Phys. Lett. 97, 2010-2012 (2010).
8. Chao, J. J., Shiu, S. C. & Lin, C. F. GaAs nanowire/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) hybrid solar cells with incorporating electron blocking poly(3-hexylthiophene) layer. Sol. Energy Mater. Sol. Cells 105, 40-45 (2012).
9. Docampo, P., Ball, J. M., Darwich, M., Eperon, G. E. & Snaith, H. J. Efficient organometal trihalide perovskite planarheterojunction solar cells on flexible polymer substrates. Nat. Commun. 4, 2761 (2013).
10. Pietsch, M., Jäckle, S. & Christiansen, S. Interface investigation of planar hybrid n-Si/PEDOT:PSS solar cells with open circuit voltages up to 645 mV and efficiencies of 12.6%. Appl. Phys. A Mater. Sci. Process. 115, 1109-1113 (2014).
11. Nagamatsu, K. A., Member, S., Avasthi, S., Jhaveri, J. & Sturm, J. C. A 12% Efficient Silicon/PEDOT: PSS Heterojunction Solar Cell Fabricated at < 100 °C. IEEE J. Photovoltaics 4, 260-264 (2014).
12. Zielke, D., Pazidis, A., Werner, F. & Schmidt, J. Organic-silicon heterojunction solar cells on n-type silicon wafers: The BackPEDOT concept. Sol. Energy Mater. Sol. Cells 131,110-116 (2014).
13. Jeong, S. et al. Hybrid silicon nanocone-polymer solar cells. Nano Lett. 12, 2971-2976 (2012).
14. Arici, E., Sariciftci, N. S. & Meissner, D. Hybrid solar cells. Encycl. Nanosci. Nanotechnol. 3, 929-944 (2004).
15. Sailor, M. J. et al. Thin Films of n-Si/Poly-(CH3)3Si-Cyclooctatetraene: Conducting-Polymer Solar Cells and Layered Structures. Science 249, 1146-1149 (1990).
16. Zhu, Y., Song, T., Zhang, F., Lee, S. T. & Sun, B. Efficient organic-inorganic hybrid Schottky solar cell: The role of built-in potential. Appl. Phys. Lett. 102, 113054 (2013).
17. Erickson, A. S., Zohar, A. & Cahen, D. N-Si-organic inversion layer interfaces: A low temperature deposition method for forming a p-n homojunction in n-Si. Adv. Energy Mater. 4, 1-4 (2014).
18. Wadhwa, P., Seol, G., Petterson, M. K., Guo, J. & Rinzler, A. G. Electrolyte-induced inversion layer Schottky junction solar cells. Nano Lett. 11, 2419-2423 (2011).
19. Tune, D. D., Flavel, B. S., Quinton, J. S., Ellis, A. V. & Shapter, J. G. Single-walled carbon nanotube/polyaniline/n-silicon solar cells: Fabrication, characterization, and performance measurements. ChemSusChem 6, 320-327 (2013).
20. Avasthi, S., Lee, S., Loo, Y. L. & Sturm, J. C. Role of majority and minority carrier barriers silicon/organic hybrid heterojunction solar cells. Adv. Mater. 23, 5762-5766 (2011).
21. Brus, V. V. et al. Electrical and photoelectrical properties of P3HT/n-Si hybrid organic-inorganic heterojunction solar cells. Org. Electron. physics, Mater. Appl. 14, 3109-3116 (2013).
22. Schmidt, J., Titova, V. & Zielke, D. Organic-silicon heterojunction solar cells: Open-circuit voltage potential and stability. Appl. Phys. Lett. 103, 6-10 (2013).
23. Sze, S. M. & Ng, K. K. Physics of Semiconductor Devices. (Wiley, 2006).
24. Crowell, C. Current transport in metal-semiconductor barriers. Solid. State. Electron. 9, 1035-1048 (1966).
25. Andrews, J. M. & Lepselter, M. P. Reverse current-voltage characteristics of metal-silicide Schottky diodes. 1968 Int. Electron Devices Meet. 14, 1011-1023 (1968).
26. Mönch, W. Barrier heights of real Schottky contacts explained by metal-induced gap states and lateral inhomogeneities. J. Vac. Sci. Technol. B Microelectron. Nanom. Struct. 17, 1867-1876 (1999).
27. Bardeen, J. Surface states and rectification at a metal semi-conductor contact. Phys. Rev. 71, 717-727 (1947).
28. Shockley, W. The Theory of p-n Junctions in Semiconductors and p-n Junction Transistors. Bell Syst. Tech. J. 28, 435-489 (1949).
29. Sah, C., Noyce, R. N. & Shockley, W. Junctions and P-N Junction Characteristics. Proc. IRE 1, 1228-1243 (1956).
30. Liu, R., Lee, S.-T. & Sun, B. 13.8% Efficiency Hybrid Si/Organic Heterojunction Solar Cells with MoO 3 Film as Antireflection and Inversion Induced Layer. Adv. Mater. 26, 6007-6012 (2014).
31. Pingel, P. & Neher, D. Comprehensive picture of p-type doping of P3HT with the molecular acceptor F4TCNQ. Phys. Rev. B-Condens. Matter Mater. Phys. 87, 1-9 (2013).
32. Dennler, G., Scharber, M. C. & Brabec, C. J. Polymer-fullerene bulk-heterojunction solar cells. Adv. Mater. 21, 1323-1338 (2009).
33. Green, M. A., Emery, K., Hishikawa, Y., Warta, W. & Dunlop, E. D. Solar cell efficiency tables (Version 45) Martin. Prog. Photovoltaics Res. Appl. 23, 1-9 (2015).
34. Yun, D.-J. et al. Characterizing Annealing Effect of Poly (3,4-ethylenedioxythiophene) Polymerized with Poly (4-styrenesulfonate) Conjugated Film on the Molecular Arrangement and Work Function by Core-Level and Valence-Level Band Spectra. ECS J. Solid State Sci. Technol. 1, M10-M14 (2012).
35. Huang, J. et al. Investigation of the effects of doping and post-deposition treatments on the conductivity, morphology, and work function of poly(3,4-ethylenedioxythiophene)/poly(styrene sulfonate) films. Adv. Funct. Mater. 15, 290-296 (2005).
36. Koch, N., Vollmer, A., Elschner, A. & Gmbh, S. Influence of water on the work function of conducting poly (3,4-ethylenedioxythiophene)/(poly(styrenesulfonate). Appl. Phys. Lett. 90, 043512 (2007).
37. Bubnova, O. et al. Semi-metallic polymers. Nat. Mater. 13, 190-194 (2013).
38. Hwang, J., Amy, F. & Kahn, A. Spectroscopic study on sputtered PEDOT PSS: Role of surface PSS layer. Org. Electron. physics, Mater. Appl. 7, 387-396 (2006).
39. Greczynski, G. et al. Photoelectron spectroscopy of thin films of PEDOT-PSS conjugated polymer blend : a mini-review and some new results. J. Electron Spectros. Relat. Phenomena 121, 1-17 (2001).
40. Seah, M. P. & Dench, W. a. Quantitative electron spectroscopy of surfaces: A standard data base for electron inelastic mean free paths in solids. Surf. Interface Anal. 1, 2-11 (1979).
41. Brédas, J. L., Thémans, B., Fripiat, J. G., André, J. M. & Chance, R. R. Highly conducting polyparaphenylene, polypyrrole, and polythiophene chains: An ab initio study of the geometry and electronic-structure modifications upon doping. Phys. Rev. B 29, 6761-6773 (1984).
42. Brédas, J. L., Wudl, F. & Heeger, A. J. Polarons and Bipolarons in doped Polythiophene: a theoretical investigation. Solid State Commun. 63, 577-580 (1987).
43. Caughey, D. M. & Thomas, R. E. Carrier mobilities in silicon empirically related to doping and field. Proc. IEEE 55, 2192-2193 (1967).