Piezotronic transistors in nonlinear circuit: Model and simulation

Science China Technological Sciences

Volumn 58, Issue 8, 2015, Pages 1348-1354

  Hu, GongWei ^a   Zhang, YuJing ^a   Luo, Lu ^a   Yang, Yang ^a   Zhang, Yan ^a,b   Wang, ZhongLin ^b,c  

^a LANZHOU UNIVERSITY   (China)

^b INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^c Georgia Institute of Technology   (United States)

Author keywords

electromechanical application; nonlinear circuit; nonlinear nanodevice; piezotronic transistor

Indexed keywords

ELECTRIC NETWORK ANALYSIS; GALLIUM NITRIDE; II-VI SEMICONDUCTORS; III-V SEMICONDUCTORS; INDIUM COMPOUNDS; INTEGRATED CIRCUIT MANUFACTURE; LAYERED SEMICONDUCTORS; MAGNETIC SEMICONDUCTORS; MOLYBDENUM COMPOUNDS; NANOSTRUCTURED MATERIALS; OXIDE MINERALS; PIEZOELECTRICITY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR JUNCTIONS; TIMING CIRCUITS; WIDE BAND GAP SEMICONDUCTORS; ZINC OXIDE; ZINC SULFIDE;

CURRENT VOLTAGE ANALYSIS; METAL SEMICONDUCTOR METAL; METAL-SEMICONDUCTOR CONTACTS; MODEL AND SIMULATION; NANO DEVICE; NONLINEAR CIRCUIT; NONLINEAR PROPERTIES; SEMICONDUCTOR PROPERTIES;

TRANSISTORS;

EID: 84938410351     PISSN: 16747321     EISSN: 18691900     Source Type: Journal    
DOI: 10.1007/s11431-015-5873-5     Document Type: Article

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