Band gap engineering of boron nitride by graphene and its application as positive electrode material in asymmetric supercapacitor device

ACS Applied Materials and Interfaces

Volumn 7, Issue 26, 2015, Pages 14211-14222

  Saha, Sanjit ^a,b   Jana, Milan ^a,b   Khanra, Partha ^c   Samanta, Pranab ^a,b   Koo, Hyeyoung ^c   Murmu, Naresh Chandra ^a,b   Kuila, Tapas ^a  

^a CSIR CENTRAL MECHANICAL ENGINEERING RESEARCH INSTITUTE   (India)

^b ACADEMY OF SCIENTIFIC AND INNOVATIVE RESEARCH ACSIR   (India)

^c Korea Institute of Science and Technology   (South Korea)

Author keywords

band gap; boron nitride; energy density; graphene; supercapacitor

Indexed keywords

BORON NITRIDE; CAPACITANCE; CAPACITORS; COMPOSITE MATERIALS; ELECTRODES; ELECTROLYTIC CAPACITORS; ENERGY GAP; GRAPHENE; NITRIDES;

ASYMMETRIC SUPERCAPACITOR; ELECTROCHEMICAL MEASUREMENTS; ENERGY DENSITY; HEXAGONAL BORON NITRIDE (H-BN); HIGH SPECIFIC CAPACITANCES; POSITIVE ELECTRODE MATERIALS; SUPER CAPACITOR; SUPERCAPACITOR APPLICATION;

ELECTROCHEMICAL ELECTRODES;

EID: 84936887122     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/acsami.5b03562     Document Type: Article

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