Sidewall damage induced by FIB milling during TEM sample preparation

IEEE International Reliability Physics Symposium Proceedings

Volumn 2004-January, Issue January, 2004, Pages 613-614

  Gao, Qiang ^a   Zhang, Mark ^a   Niou, Chorng ^a   Li, Ming ^a   Chien, Kary ^a  

^a SEMICONDUCTOR MANUFACTURING INTERNATIONAL CORPORATION   (China)

Author keywords

FIB; sidewall damage; TEM

Indexed keywords

RELIABILITY; TRANSMISSION ELECTRON MICROSCOPY;

AMORPHOUS LAYER; DAMAGED LAYERS; FIB; INCIDENT BEAMS; LAYER THICKNESS; PHYSICAL THICKNESS; SIDEWALL DAMAGE; TEM SAMPLE PREPARATION;

ION BEAMS;

EID: 84932124931     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2004.1315415     Document Type: Conference Paper

References (7)

1. N. I. Kato, Y. Kohno, and H. Saka, Side-wall damage in a transmission electron microscopy specimen of crystalline Si prepared by focused ion beam etching, J. Vac. Sci. Technol., A 17(4), 1999, p1201-1204.
2. R.M. Langford, A.L. Petford-Long, preparation of transmission electron microscopy cross-section specimens using focused ion beam milling, J. Vac. Sci.Technol., A19(5), 2001, p2186-2193
3. Leslie A.J., K.L. Pey, KS. Sim, M.T.F. Ben and GP. Goh, TEM sample preparation using FIB: practical problems and artifacts. Proc. ISTFA'95, p353-362
4. Walker, J.F. and R.F. Broom, Surface damage of Semiconductor TEM samples prepared by focused ion beams, Inst. Phys. Conf. Ser. 157, 473(1997)
5. Walker JF, JC Reiner and C. Solenthaler, Focused Ion Beam Sample Preparation for TEM, Inst. Phys. Conf. Ser. 146, 629 (1995)
6. L.A. Giannuzzi, F.A. Stevie, A review of focused ion bam milling techniques for TEM specimen preparation, Micron 30 (I999)pl97-204
7. A. Barna, B. Pecz, M. Menyhard, TEM sample preparation by ion milling/amorphization, Micron 30 (1999) p267-276.