Self-aligned line-space pattern customization with directed self-assembly graphoepitaxy at 24nm pitch

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 9423, Issue , 2015, Pages

  Tsai, Hsin Yu ^a   Miyazoe, Hiroyuki ^a   Cheng, Joy ^b   Brink, Markus ^a   Dawes, Simon ^a   Klaus, David ^a   Bucchignano, James ^a   Sanders, Daniel ^b   Joseph, Eric ^a   Colburn, Matthew ^c   Guillorn, Michael ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IBM ALMADEN RESEARCH CENTER   (United States)

^c Albany Nanotech   (United States)

Author keywords

directed self assembly; FinFET device; grapho epitaxy; pitch scaling; PS PMMA

Indexed keywords

EPITAXIAL GROWTH; FINS (HEAT EXCHANGE); INTEGRATED CIRCUITS; SILICON ON INSULATOR TECHNOLOGY;

CUSTOMIZATION STRATEGIES; DIRECTED SELF-ASSEMBLY; FINFET DEVICES; MATERIAL SELECTION; PITCH SCALING; SILICON-ON-INSULATOR SUBSTRATES; SPACE PATTERNS; TWO-DIMENSIONAL PATTERNS;

SELF ASSEMBLY;

EID: 84931298911     PISSN: 0277786X     EISSN: 1996756X     Source Type: Conference Proceeding    
DOI: 10.1117/12.2084845     Document Type: Conference Paper

References (7)

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