Length dependent performance of single-wall carbon nanotube thin film transistors

Carbon

Volumn 91, Issue , 2015, Pages 370-377

  Kuwahara, Yuki ^a,c   Nihey, Fumiyuki ^b,c   Ohmori, Shigekazu ^a,c   Saito, Takeshi ^a,c  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b NEC CORPORATION   (Japan)

^c Technology Research Association for Single Wall Carbon Nanotubes (TASC)   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CARBON NANOTUBES; FIELD EFFECT TRANSISTORS; SIZE EXCLUSION CHROMATOGRAPHY; SOLVENTS; THIN FILM TRANSISTORS; THIN FILMS; YARN;

AVERAGE LENGTH; DEVICE PERFORMANCE; OFF CURRENT; ON CURRENTS; ON/OFF RATIO; PERCOLATION THEORY; PERCOLATION THRESHOLDS; THIN-FILM TRANSISTOR (TFTS);

SINGLE-WALLED CARBON NANOTUBES (SWCN);

EID: 84930208539     PISSN: 00086223     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.carbon.2015.05.008     Document Type: Article

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