Diameter-dependent performance of single-walled carbon nanotube thin-film transistors

Advanced Materials

Volumn 23, Issue 40, 2011, Pages 4631-4635

  Asada, Yuki ^a   Nihey, Fumiyuki ^b,d   Ohmori, Shigekazu ^a   Shinohara, Hisanori ^c   Saito, Takeshi ^a,d  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b NEC CORPORATION   (Japan)

^c NAGOYA UNIVERSITY   (Japan)

^d Technology Research Association for Single Wall Carbon Nanotubes   (Japan)

Author keywords

carbon nanotubes; length sorting; thin films; transistors

Indexed keywords

EXCITED CARRIERS; LENGTH-SORTING; ON-CURRENTS; PERCOLATION THEORY; TEMPERATURE DEPENDENCE; TUBE DIAMETERS; TUBE LENGTH;

EXCITED STATES; SEMICONDUCTING FILMS; SOLVENTS; THIN FILM TRANSISTORS;

SINGLE-WALLED CARBON NANOTUBES (SWCN);

CARBON NANOTUBE;

ARTICLE; ATOMIC FORCE MICROSCOPY; CHEMISTRY; SEMICONDUCTOR; TEMPERATURE;

MICROSCOPY, ATOMIC FORCE; NANOTUBES, CARBON; TEMPERATURE; TRANSISTORS, ELECTRONIC;

EID: 80054799523     PISSN: 09359648     EISSN: 15214095     Source Type: Journal    
DOI: 10.1002/adma.201102806     Document Type: Article

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