Emergence of ferroelectricity and spin-valley properties in two-dimensional honeycomb binary compounds

Physical Review B - Condensed Matter and Materials Physics

Volumn 91, Issue 16, 2015, Pages

  Di Sante, Domenico ^a,b   Stroppa, Alessandro ^a   Barone, Paolo ^a   Whangbo, Myung Hwan ^c   Picozzi, Silvia ^a  

^a Consiglio Nazionale Delle Ricerche ^*  (Italy)

^b UNIVERSITY OF L'AQUILA   (Italy)

^c NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84929224083     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.91.161401     Document Type: Article

References (43)

1. A. Rycerz, J. Tworzydo, and C. W. J. Beenakker, Valley filter and valley valve in graphene, Nat. Phys. 3, 172 (2007). 1745-2473 10.1038/nphys547
2. D. Xiao, W. Yao, and Q. Niu, Valley-contrasting physics in graphene: Magnetic moment and topological transport, Phys. Rev. Lett. 99, 236809 (2007). PRLTAO 0031-9007 10.1103/PhysRevLett.99.236809
3. A. H. Castro Neto, F. Guinea, N. M. R. Peres, K. S. Novoselov, and A. K. Geim, The electronic properties of graphene, Rev. Mod. Phys. 81, 109 (2009). RMPHAT 0034-6861 10.1103/RevModPhys.81.109
4. M.-K. Lee, N.-Y. Lue, C.-K. Wen, and G. Y. Wu, Valley-based field-effect transistors in graphene, Phys. Rev. B 86, 165411 (2012). PRBMDO 1098-0121 10.1103/PhysRevB.86.165411
5. H. Zeng, J. Dai, W. Yao, D. Xiao, and X. Cui, Valley polarization in (Equation presented) monolayers by optical pumping, Nat. Nanotechnol. 7, 490 (2012). 1748-3387 10.1038/nnano.2012.95
6. K. F. Mak, K. He, J. Shan, and T. F. Heinz, Control of valley polarization in monolayer (Equation presented) by optical helicity, Nat. Nanotechnol. 7, 494 (2012). 1748-3387 10.1038/nnano.2012.96
7. T. Cao, G. Wang, W. Han, H. Ye, C. Zhu, J. Shi, Q. Niu, P. Tan, E. Wang, B. Liu, Valley-selective circular dichroism of monolayer molybdenum disulphide, Nat. Commun. 3, 887 (2012). 2041-1723 10.1038/ncomms1882
8. K. Behnia, Condensed-matter physics: Polarized light boosts valleytronics, Nat. Nanotechnol. 7, 488 (2012). 1748-3387 10.1038/nnano.2012.117
9. H. Yuan, M. S. Bahramy, K. Morimoto, S. Wu, K. Nomura, B.-J. Yang, H. Shimotani, R. Suzuki, M. Toh, C. Kloc, Zeeman-type spin splitting controlled by an electric field, Nat. Phys. 9, 563 (2013). 1745-2473 10.1038/nphys2691
10. C. Mai, A. Barrette, Y. Yu, Y. G. Semenov, K. W. Kim, L. Cao, and K. Gundogdu, Many-body effects in valleytronics: Direct measurement of valley lifetimes in single-layer (Equation presented), Nano Lett. 14, 202 (2014). NALEFD 1530-6984 10.1021/nl403742j
11. K. F. Mak, K. L. McGill, J. Park, and P. L. McEuen, The valley hall effect in (Equation presented) transistors, Science 344, 1489 (2014). SCIEAS 0036-8075 10.1126/science.1250140
12. X. Xu, W. Yao, D. Xiao, and T. F. Heinz, Spin and pseudospins in layered transition metal dichalcogenides, Nat. Phys. 10, 343 (2014). 1745-2473 10.1038/nphys2942
13. D. Xiao, G.-B. Liu, W. Feng, X. Xu, and W. Yao, Coupled spin and valley physics in monolayers of (Equation presented) and other group-VI dichalcogenides, Phys. Rev. Lett. 108, 196802 (2012). PRLTAO 0031-9007 10.1103/PhysRevLett.108.196802
14. H. Şahin, S. Cahangirov, M. Topsakal, E. Bekaroglu, E. Akturk, R. T. Senger, and S. Ciraci, Monolayer honeycomb structures of group-IV elements and III-V binary compounds: First-principles calculations, Phys. Rev. B 80, 155453 (2009). PRBMDO 1098-0121 10.1103/PhysRevB.80.155453
15. See Supplemental Material at http://link.aps.org/supplemental/10.1103/PhysRevB.91.161401 for additional details on structural and electronic properties, as well as model Hamiltonian analysis.
16. M. Ezawa, Spin valleytronics in silicene: Quantum spin Hall-quantum anomalous Hall insulators and single-valley semimetals, Phys. Rev. B 87, 155415 (2013). PRBMDO 1098-0121 10.1103/PhysRevB.87.155415
17. E. I. Rashba, Properties of semiconductors with an extremum loop. 1. Cyclotron and combinational resonance in a magnetic field perpendicular to the plane of the loop, Sov. Phys. Solid State 2, 1109 (1960).
18. D. Di Sante, P. Barone, R. Bertacco, and S. Picozzi, Electric control of the giant rashba effect in bulk GeTe, Adv. Mater. 25, 509 (2013). ADVMEW 0935-9648 10.1002/adma.201203199
19. S. Z. Butler, S. M. Hollen, L. Cao, Y. Cui, J. A. Gupta, H. R. Gutirrez, T. F. Heinz, S. S. Hong, J. Huang, A. F. Ismach, Progress, challenges, and opportunities in two-dimensional materials beyond graphene, ACS Nano 7, 2898 (2013). 1936-0851 10.1021/nn400280c
20. S. Balendhran, S. Walia, H. Nili, S. Sriram, and M. Bhaskaran, Elemental analogues of graphene: Silicene, germanene, stanene, and phosphorene, Small 11, 640 (2015). 10.1002/smll.201402041
21. B. Aufray, A. Kara, S. Vizzini, H. Oughaddou, C. Léandri, B. Ealet, and G. Le Lay, Graphene-like silicon nanoribbons on Ag(110): A possible formation of silicene, Appl. Phys. Lett. 96, 183102 (2010). APPLAB 0003-6951 10.1063/1.3419932
22. P. Vogt, P. De Padova, C. Quaresima, J. Avila, E. Frantzeskakis, M. C. Asensio, A. Resta, B. Ealet, and G. Le Lay, Silicene: Compelling experimental evidence for graphenelike two-dimensional silicon, Phys. Rev. Lett. 108, 155501 (2012). PRLTAO 0031-9007 10.1103/PhysRevLett.108.155501
23. B. J. Feng, Z. J. Ding, S. Meng, Y. Yao, X. He, P. Cheng, L. Chen, and H. Wu, Evidence of silicene in honeycomb structures of silicon on Ag(111), Nano Lett. 12, 3507 (2012). NALEFD 1530-6984 10.1021/nl301047g
24. L. Meng, Y. Wang, L. Zhang, S. Du, R. Wu, L. Li, Y. Zhang, G. Li, H. Zhou, W. A. Hofer, Buckled silicene formation on Ir(111), Nano Lett. 13, 685 (2013). NALEFD 1530-6984 10.1021/nl304347w
25. L. Li, S.-Z. Lu, J. Pan, Z. Qin, Y.-Q. Wang, Y. Wang, G.-Y. Cao, S. Du, and H.-J. Gao, Buckled germanene formation on Pt(111), Adv. Mater. 26, 4820 (2014). ADVMEW 0935-9648 10.1002/adma.201400909
26. M. E. Dávila, L. Xian, S. Cahangirov, A. Rubio, and G. Le Lay, Germanene: A novel two-dimensional germanium allotrope akin to graphene and silicene, New J. Phys. 16, 095002 (2014). NJOPFM 1367-2630 10.1088/1367-2630/16/9/095002
27. P. Miró, M. Audiffred, and T. Heine, An atlas of two-dimensional materials, Chem. Soc. Rev. 43, 6537 (2014). 0306-0012 10.1039/C4CS00102H
28. S. S. J. Lin, Previous Article Next Article Table of Contents Light-Emitting two-dimensional ultrathin silicon carbide, Phys. Chem. C 116, 3951 (2012). 1932-7447 10.1021/jp210536m
29. A. K. Singh, H. L. Zhuang, and R. G. Hennig, Ab initio synthesis of single-layer III-V materials, Phys. Rev. B 89, 245431 (2014). PRBMDO 1098-0121 10.1103/PhysRevB.89.245431
30. D. Di Sante, P. Barone, E. Plekhanov, S. Ciuchi, and S. Picozzi, Robustness against disorder of relativistic spectral properties in chalcogenide alloys, arXiv:1407.2064.
31. L. Onsager, Crystal Statistics. I. A Two-Dimensional Model with an Order-Disorder Transition, Phys. Rev. 65, 117 (1944). PHRVAO 0031-899X 10.1103/PhysRev.65.117
32. C. Rosenblatt, R. Pindak, N. A. Clark, and R. B. Meyer, Freely suspended ferroelectric liquid-crystal films: Absolute measurements of polarization, elastic constants, and viscosities, Phys. Rev. Lett. 42, 1220 (1979). PRLTAO 0031-9007 10.1103/PhysRevLett.42.1220
33. Y. Tabe, T. Yamamoto, I. Nishiyama, M. Yoneya, and H. Yokoyama, Ferroelectric nematic monolayer, Jpn. J. Appl. Phys. 42, L406 (2003). JAPLD8 0021-4922 10.1143/JJAP.42.L406
34. W. Zhong, R. D. King-Smith, and D. Vanderbilt, Giant LO-TO splittings in perovskite ferroelectrics, Phys. Rev. Lett. 72, 3618 (1994). PRLTAO 0031-9007 10.1103/PhysRevLett.72.3618
35. K. F. Garrity, K. M. Rabe, and D. Vanderbilt, Hyperferroelectrics: Proper Ferroelectrics with Persistent Polarization, Phys. Rev. Lett. 112, 127601 (2014). PRLTAO 0031-9007 10.1103/PhysRevLett.112.127601
36. S. N. Shirodkar and U. V. Waghmare, Emergence of ferroelectricity at a metal-semiconductor transition in a (Equation presented) monolayer of (Equation presented), Phys. Rev. Lett. 112, 157601 (2014). PRLTAO 0031-9007 10.1103/PhysRevLett.112.157601
37. Na Sai, C. J. Fennie, and A. A. Demkov, Absence of Critical Thickness in an Ultrathin Improper Ferroelectric Film, Phys. Rev. Lett. 102, 107601 (2009). PRLTAO 0031-9007 10.1103/PhysRevLett.102.107601
38. Q. Fu, Y. Luo, J. Yang, and J. Hou, Understanding the concept of randomness in inelastic electron tunneling excitations, Phys. Chem. Chem. Phys. 12, 12012 (2010). PPCPFQ 1463-9076 10.1039/b926310a
39. N. Pavliček, B. Fleury, M. Neu, J. Niedenführ, C. Herranz-Lancho, M. Ruben, and J. Repp, Atomic force microscopy reveals bistable configurations of dibenzo[a,h]thianthrene and their interconversion pathway, Phys. Rev. Lett. 108, 086101 (2012). PRLTAO 0031-9007 10.1103/PhysRevLett.108.086101
40. S. Konschuh, M. Gmitra, and J. Fabian, Tight-binding theory of the spin-orbit coupling in graphene, Phys. Rev. B 82, 245412 (2010). PRBMDO 1098-0121 10.1103/PhysRevB.82.245412
41. C.-C. Liu, H. Jiang, and Y. Yao, Low-energy effective hamiltonian involving spin-orbit coupling in silicene and two-dimensional germanium and tin, Phys. Rev. B 84, 195430 (2011). PRBMDO 1098-0121 10.1103/PhysRevB.84.195430
42. N. D. Drummond, V. Zólyomi, and V. I. Fal'ko, Electrically tunable band gap in silicene, Phys. Rev. B 85, 075423 (2012). PRBMDO 1098-0121 10.1103/PhysRevB.85.075423
43. K. Wittel and R. Manne, Atomic spin-orbit interaction parameters from spectral data for 19 elements, Theoret. Chim. Acta (Berl.) 33, 347 (1974). TCHAAM 0040-5744 10.1007/BF00551162