Transition metal doped phosphorene: First-principles study

Journal of Physical Chemistry C

Volumn 119, Issue 17, 2015, Pages 9198-9204

  Hashmi, Arqum ^a   Hong, Jisang ^a  

^a Pukyong National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; ENERGY GAP; GROUND STATE; MAGNETIC SEMICONDUCTORS; MAGNETISM; MANGANESE; SEMICONDUCTOR DOPING; SPIN POLARIZATION; TRANSITION METALS;

DILUTE MAGNETIC SEMICONDUCTORS; FIRST-PRINCIPLES STUDY; LAYER STRUCTURED MATERIALS; MAGNETIC GROUND STATE; MAGNETIC INTERACTIONS; RESEARCH INTERESTS; SPIN POLARIZED STATE; SPINTRONICS MATERIALS;

DOPING (ADDITIVES);

EID: 84928888375     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp511574n     Document Type: Article

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