Ab initio study of hot electrons in GaAs

Proceedings of the National Academy of Sciences of the United States of America

Volumn 112, Issue 17, 2015, Pages 5291-5296

  Bernardi, Marco ^a,b   Vigil Fowler, Derek ^a,b   Ong, Chin Shen ^a   Neaton, Jeffrey B ^a,b   Louie, Steven G ^a,b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

Electron phonon; GaAs; Hot carriers; Scattering; Semiconductors; Ultrafast

Indexed keywords

GALLIUM ARSENIDE;

AB INITIO CALCULATION; ABSORPTION; ARTICLE; COOLING; DENSITY; DENSITY FUNCTIONAL THEORY; ELECTRIC FIELD; ELECTRON; MONTE CARLO METHOD; OPTICS; PHONON; PRIORITY JOURNAL; QUANTITATIVE ANALYSIS; RELAXATION TIME; SEMICONDUCTOR;

EID: 84928658124     PISSN: 00278424     EISSN: 10916490     Source Type: Journal    
DOI: 10.1073/pnas.1419446112     Document Type: Article

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