Investigation of extended-gate field-effect transistor pH sensors based on different-temperature-annealed bi-layer MWCNTs-In2O3 films

Nanoscale Research Letters

Volumn 9, Issue 1, 2014, Pages

  Hung, Shang Chao ^a   Cheng, Nai Jen ^b   Yang, Cheng Fu ^c   Lo, Yuan Pin ^d  

^a SHIH CHIEN UNIVERSITY   (Taiwan)

^b NATIONAL KAOHSIUNG UNIVERSITY OF APPLIED SCIENCES   (Taiwan)

^c NATIONAL UNIVERSITY OF KAOHSIUNG   (Taiwan)

^d NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Bi layer; Multiwalled carbon nanotubes; MWCNTs In2O3 films; pH sensor

Indexed keywords

ANNEALING; ATMOSPHERIC TEMPERATURE; CARBON FILMS; FIELD EFFECT TRANSISTORS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; INDIUM COMPOUNDS; MULTIWALLED CARBON NANOTUBES (MWCN); NANOTUBES; PH EFFECTS; SCANNING ELECTRON MICROSCOPY; SUBSTRATES;

ANNEALING TEMPERATURES; BI-LAYER; EXTENDED GATE FIELD EFFECT TRANSISTOR (EGFET); EXTENDED GATE FIELD EFFECT TRANSISTORS; FOURIER TRANSFORM INFRA RED (FTIR) SPECTROSCOPY; GLASS SUBSTRATES; MULTIWALLED CARBON NANOTUBE (MWCNTS); PH SENSITIVITY;

PH SENSORS;

EID: 84928396088     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-9-502     Document Type: Article

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