Indium-Rich InGaN films grown on ge substrate by plasma-assisted molecular beam epitaxy for solar water splitting

Journal of Electronic Materials

Volumn 44, Issue 1, 2015, Pages 202-209

  Ma, Quan Bao ^a,b,c,d   Lieten, Ruben ^a,b   Degroote, Stefan ^a   Germain, Marianne ^a   Borghs, Gustaaf ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^d UNIVERSITY OF OSLO   (Norway)

Author keywords

Growth; InGaN films; MBE; Photocurrent; Plasma; Water splitting

Indexed keywords

BUFFER LAYERS; GALLIUM NITRIDE; GERMANIUM METALLOGRAPHY; GROWTH (MATERIALS); INDIUM; INDIUM METALLOGRAPHY; LATTICE MISMATCH; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MORPHOLOGY; PHOTOCURRENTS; PLASMAS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTOR ALLOYS; SEMICONDUCTOR QUANTUM WELLS; SURFACE MORPHOLOGY; SURFACE SEGREGATION;

CRYSTAL QUALITIES; GAN BUFFER; GE SUBSTRATES; PHOTO-ELECTRODES; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; SOLAR WATER SPLITTING; THREE DIMENSIONAL (3D) GROWTH; WATER SPLITTING;

III-V SEMICONDUCTORS;

EID: 84925519578     PISSN: 03615235     EISSN: 1543186X     Source Type: Journal    
DOI: 10.1007/s11664-014-3454-1     Document Type: Article

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