Electrical properties of the rear contact structure of MWT silicon solar cells

Solar Energy Materials and Solar Cells

Volumn 137, Issue , 2015, Pages 293-302

  Lohmüller, Elmar ^a   Thanasa, Mikaella ^a   Thaidigsmann, Benjamin ^a   Clement, Florian ^a   Biro, Daniel ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

Metal wrap through; MWT; n Type; p Type; Silicon solar cell; Via paste metallization

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; LEAKAGE CURRENTS; SCREEN PRINTING; SEMICONDUCTOR JUNCTIONS;

BACK SURFACE FIELDS; DARK CURRENT-VOLTAGE; DIELECTRIC INSULATIONS; ELECTRICAL CONTACTS; IV CHARACTERISTICS; METAL WRAP THROUGH SOLAR CELL (MWT); P-TYPE; STABILITY TESTS;

SILICON SOLAR CELLS;

EID: 84924577153     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2015.02.005     Document Type: Article

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