Coexistence of metallic and insulating-like states in graphene

Scientific Reports

Volumn 5, Issue , 2015, Pages

  Wu, Fang ^a,b   Huang, Jing ^c   Li, Qunxiang ^d   Deng, Kaiming ^b   Kan, Erjun ^b  

^a NANJING FORESTRY UNIVERSITY   (China)

^b NANJING UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^c ANHUI JIANZHU UNIVERSITY   (China)

^d UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84924369146     PISSN: None     EISSN: 20452322     Source Type: Journal    
DOI: 10.1038/srep08974     Document Type: Article

References (28)

1. Wolf, S. A. et al. Spintronics: A Spin-Based Electronics Vision for the Future. Science. 294, 1488 (2001).
2. Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V. & Kis, A. Single-layer MoS2 transistors. Nature Nanotechnology. 6, 147 (2011).
3. Park, J. H. et al. Direct evidence for a half-metallic ferromagnet. Nature 392, 794 (1998).
4. Loh, K., Bao, Q., Eda, G. & Chhowalla,M. Graphene oxide as a chemically tunable platform for optical applications. Nature Chemistry 2, 1015 (2010).
5. Britnell, L. et al. Resonant tunnelling and negative differential conductance in graphene transistors. Nature. Comm. 4, 1794 (2013).
6. Geim, A.&Grigorieva, I. Van Der Waals heterostructures. Nature 499, 419 (2013).
7. Gao, J., Yip, J., Zhao, J., Yakobson, B. & Ding, F. Graphene Nucleation on Transition Metal Surface: Structure Transformation and Role of the Metal Step Edge. J. Am. Chem. Soc. 133, 5009 (2011).
8. Wang, L., Zhang, X., Chan, H., Yan, F. & Ding, F. Formation and Healing of Vacancies in Graphene Chemical Vapor Deposition (CVD) Growth. J. Am. Chem. Soc. 135, 4476 (2013).
9. Wu, P. et al. Lattice Mismatch Induced Nonlinear Growth of Graphene. J. Am. Chem. Soc. 134, 6045 (2012).
10. Chen, W. et al. Hydrogenation: A Simple Approach To Realize Semiconductor2Half-Metal2Metal Transition in Boron Nitride Nanoribbons. J. Am. Chem. Soc. 132, 1699 (2010).
11. Li, Y., Li, F. & Chen, Z. Graphane/Fluorographene Bilayer: Considerable C2H F2C Hydrogen Bonding and Effective Band Structure Engineering. J. Am. Chem. Soc. 134, 11269 (2012).
12. Du, A. et al. Hybrid graphene and graphitic carbon nitride nanocomposite: Gap opening, electron-hole puddle, interfacial charge transfer, and enhanced visible light response. J. Am. Chem. Soc. 134, 4393 (2012).
13. Wang, Q., Shih, C., Paulus, G. & Strano, M. Evolution of Physical and Electronic Structures of Bilayer Graphene upon Chemical Functionalization. J. Am. Chem. Soc. 135, 18866 (2013).
14. Baringhaus, Jens et al. Exceptional ballistic transport in epitaxial graphene nanoribbons. Nature. 506, 349 (2014).
15. Jiao, L., Zhang, L., Wang, X., Diankov, G. & Dai, H. Narrow graphene nanoribbons from carbon nanotubes. Nature 458, 877 (2009).
16. Wang, X. et al. Graphene nanoribbons with smooth edges behave as quantum wires. Nature Nanotechnology 6, 563 (2011).
17. Cullen, W. G. et al. High-Fidelity Conformation of Graphene to Topographic Features. Phys. Rev. Lett. 105, 215504 (2010).
18. Zhou, S. Y. et al. Substrate-induced bandgap opening in epitaxial graphene. Nat. Mater. 6, 770 (2007).
19. Kan, E. et al. Why the Band Gap of Graphene Is Tunable on Hexagonal Boron Nitride. J. Phys. Chem. C. 116, 3142 (2012).
20. Zhang, Y. et al. Direct observation of a widely tunable bandgap in bilayer graphene. Nature 459, 820 (2009).
21. Elias, D. C. et al. Control of Graphene's Properties by Reversible Hydrogenation: Evidence for Graphane. Science 323, 610 (2009).
22. Sainsbury, T. et al. Oxygen radical functionalization of boron nitride nanosheets. J. Am. Chem. Soc. 134, 18758 (2012).
23. Kan, E., Wu, F., Deng, K. & Tang, W. High-temperature ferro-electricity in twodimensional atomic crystal. Appl. Phys. Lett. 103, 193103 (2013).
24. Perdew, J. & Wang, Y. A. Accurate and simple analytic representation of the electron-gas correlation energy. Phys. Rev. B. 45, 13244 (1992).
25. Kresse, G. & Furthmüller, J. Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set. Comput. Mater. Sci. 6, 15 (1996).
26. Kresse, G. & Furthmüller, J. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set. Phys. Rev. B 54, 11169 (1996).
27. Taylor, J., Guo, H.&Wang, J. Ab initio modeling of quantum transport properties of molecular electronic devices. Phys. Rev. B 63, 245407 (2001).
28. Brandyge, M., Mozos, J. L., Ordejón, P., Taylor, J. & Stokbro, K. Densityfunctional method for nonequilibrium electron transport. Phys. Rev. B 65, 165401 (2002).