Vertically aligned epitaxial graphene nanowalls with dominated nitrogen doping for superior supercapacitors

Carbon

Volumn 82, Issue C, 2015, Pages 124-134

  Yen, Hsiang Feng ^a,b   Horng, Ying Ying ^c   Hu, Ming Shien ^b   Yang, Wei Hsun ^a   Wen, Je Ruei ^c   Ganguly, Abhijit ^b   Tai, Yian ^a   Chen, Kuei Hsien ^b,c   Chen, Li Chyong ^c  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^b INSTITUTE OF ATOMIC AND MOLECULAR SCIENCES   (Taiwan)

^c NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CAPACITORS; CHEMICAL BONDS; DOPING (ADDITIVES); ELECTRODES; GRAPHENE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

BONDING CONFIGURATIONS; CAPACITIVE PERFORMANCE; ELECTRODE MATERIAL; EPITAXIAL GRAPHENE; MICROWAVE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITIONS; SPECIFIC CAPACITANCE; THREE DIMENSIONAL (3D) ARCHITECTURES; VERTICALLY ALIGNED;

ELECTROLYTIC CAPACITORS;

EID: 84923599099     PISSN: 00086223     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.carbon.2014.10.042     Document Type: Article

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