Tandem photo-electrode of InGaN with two Si p-n junctions for CO2 conversion to HCOOH with the efficiency greater than biological photosynthesis

Applied Physics Letters

Volumn 106, Issue 7, 2015, Pages

  Sekimoto, Takeyuki ^a   Shinagawa, Shuichi ^b   Uetake, Yusuke ^c   Noda, Keiichi ^a   Deguchi, Masahiro ^a   Yotsuhashi, Satoshi ^a   Ohkawa, Kazuhiro ^c  

^a PANASONIC CORPORATION   (Japan)

^b Panasonic Semiconductor Solutions Co Ltd   (Japan)

^c TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON DIOXIDE; CONVERSION EFFICIENCY; ELECTRODES; ENERGY CONVERSION; ENERGY GAP; FORMIC ACID; III-V SEMICONDUCTORS; IMAGE ENHANCEMENT; SEMICONDUCTOR ALLOYS; SEMICONDUCTOR JUNCTIONS;

CONVERSION SYSTEMS; CURRENT MATCHING; GAN BASED; ITS EFFICIENCIES; NARROW BAND GAP; PHOTO-ELECTRODES; PHOTOABSORPTIONS; SI P-N JUNCTIONS;

SILICON;

EID: 84923380025     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4910510     Document Type: Article

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