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AIP Advances

Volumn 4, Issue 6, 2014, Pages

Effect of inserted Si p-n junction on GaN-based photo-electrochemical CO2 conversion system

(4) Yotsuhashi, Satoshi a Deguchi, Masahiro a Yamada, Yuka a Ohkawa, Kazuhiro b

a PANASONIC CORPORATION (Japan)

b TOKYO UNIVERSITY OF SCIENCE (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODES; ETHYLENE; GALLIUM ALLOYS; GALLIUM NITRIDE; METHANE; REACTION PRODUCTS; REDUCTION; SEMICONDUCTOR JUNCTIONS; SILICON;

CATHODE AND ANODE; CATHODE POTENTIAL; CONVERSION SYSTEMS; OXYGEN EVOLUTION; PHOTOELECTRODE; REACTION CONDITIONS; REDUCTION SYSTEMS; SI P-N JUNCTIONS;

CARBON DIOXIDE;

EID: 84903180243 PISSN: None EISSN: 21583226 Source Type: Journal
DOI: 10.1063/1.4885138 Document Type: Article

Times cited : (13)

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