Direct femtosecond observation of charge carrier recombination in ternary semiconductor nanocrystals: The effect of composition and shelling

Journal of Physical Chemistry C

Volumn 119, Issue 6, 2015, Pages 3439-3446

  Bose, Riya ^a   Ahmed, Ghada H ^a   Alarousu, Erkki ^a   Parida, Manas R ^a   Abdelhady, Ahmed L ^a   Bakr, Osman M ^a   Mohammed, Omar F ^a  

^a KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Saudi Arabia)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; COPPER COMPOUNDS; DEFECTS; DYNAMICS; ENERGY GAP; HEAVY METALS; II-VI SEMICONDUCTORS; INDIUM COMPOUNDS; LASER SPECTROSCOPY; NANOCRYSTALS; WIDE BAND GAP SEMICONDUCTORS; ZINC SULFIDE;

ANION COMPOSITION; CARRIER DYNAMICS; CHARGE CARRIER DYNAMICS; CHARGE CARRIER RECOMBINATION; EXCITED CARRIERS; RELATIVE ABUNDANCE; STATE OF THE ART; TERNARY SEMICONDUCTORS;

SELENIUM COMPOUNDS;

EID: 84923197340     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/acs.jpcc.5b00204     Document Type: Article

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