Ultrafast carrier trapping of a metal-doped titanium dioxide semiconductor revealed by femtosecond transient absorption spectroscopy

ACS Applied Materials and Interfaces

Volumn 6, Issue 13, 2014, Pages 10022-10027

  Sun, Jingya ^a   Yang, Yang ^a   Khan, Jafar I ^a   Alarousu, Erkki ^a   Guo, Zaibing ^a   Zhang, Xixiang ^a   Zhang, Qiang ^a   Mohammed, Omar F ^a  

^a KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Saudi Arabia)

Author keywords

deep level state; metal doped; titanium dioxide; transient absorption spectroscopy; ultrafast carrier trapping

Indexed keywords

CONDUCTION BANDS; METAL IONS; METALS; OXIDES; SEMICONDUCTOR DOPING; TITANIUM DIOXIDE;

DEEP-LEVEL STATE; FEMTOSECOND TRANSIENT ABSORPTION SPECTROSCOPY; HIGH-SPEED OPTOELECTRONICS; METAL-DOPED; TITANIUM DIOXIDE SEMICONDUCTORS; TRANSIENT ABSORPTION SPECTROSCOPIES; ULTRAFAST CARRIER DYNAMICS; ULTRAFAST CARRIERS;

CARRIER CONCENTRATION;

EID: 84904135239     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am5026159     Document Type: Article

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