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Volumn 8731, Issue , 2014, Pages 112-126

Reversing stealthy dopant-level circuits

Author keywords

Chip reverse engineering; LSI failure analysis; Passive voltage contrast; Stealthy dopant level trojan

Indexed keywords

FAILURE (MECHANICAL); FAILURE ANALYSIS; LSI CIRCUITS; REVERSE ENGINEERING; SCANNING ELECTRON MICROSCOPY; TIMING CIRCUITS; VOLTAGE MEASUREMENT; CRYPTOGRAPHY; ION BEAMS;

EID: 84921441391     PISSN: 03029743     EISSN: 16113349     Source Type: Book Series    
DOI: 10.1007/978-3-662-44709-3_7     Document Type: Article
Times cited : (43)

References (17)
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  • 2
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    • The State-of-the-Art in IC Reverse Engineering
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    • (2009) CHES 2009. LNCS , vol.5747 , pp. 363-381
    • Torrance, R.1    James, D.2
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    • A (In)security of Commonly Found Smart Cards, Invited Talk II
    • Tarnovsky, C. (In)security of Commonly Found Smart Cards, Invited Talk II. In: CHES (2012)
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  • 9
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    • CMOS Digital Integrated Circuits Analysis & Design
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    • Circuit Camouflage Technology - SMI IP Protection and Anti-Tamper Technologies
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  • 13
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    • Mechanism and Application of NMOS Leakage with Intra-Well Isolation Breakdown by Voltage Contrast Detection
    • Chen, H., Fan, R., Lou, H., Kuo, M., Huang, Y.: Mechanism and Application of NMOS Leakage with Intra-Well Isolation Breakdown by Voltage Contrast Detection. Journal of Semiconductor Technology and Science 13(4), 402–409 (2013)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.