Intermixing in strained InGaAs/GaAs quantum-well infrared photodetectors

Applied Physics Letters

Volumn 74, Issue 8, 1999, Pages 1102-1104

  Lee, Alex S W ^a   Li, E Herbert ^a   Karunasiri, Gamani ^b  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; HETEROJUNCTIONS; INTERDIFFUSION (SOLIDS); LIGHT POLARIZATION; OPTICAL VARIABLES MEASUREMENT; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS;

INTERBAND TRANSITIONS; PHOTOLUMINESCENCE MEASUREMENT; TRANSVERSE ELECTRIC POLARIZATION; TRANSVERSE MAGNETIC POLARIZATION;

INFRARED DETECTORS;

EID: 0033593718     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123456     Document Type: Article

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