SiOx nanodots as a 'green gap' solution

Journal of Nanophotonics

Volumn 8, Issue 1, 2014, Pages

  Mondal, Aniruddha ^a,b   Mahajan, Bikram Kishore ^b,c   Choudhuri, Bijit ^b   Tiwari, Ajitabh Kumar ^b   Chakrabarty, Santanu ^d   Chattopadhyay, Kalyan Kumar ^e  

^a NATIONAL INSTITUTE OF TECHNOLOGY   (India)

^b NATIONAL INSTITUTE OF TECHNOLOGY   (India)

^c Department of Electrical Engineering and Computer Science   (United States)

^d TRIPURA UNIVERSITY   (India)

^e JADAVPUR UNIVERSITY   (India)

Author keywords

Photodetector; Photoluminescence; Thin film

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC LAMPS; LEAKAGE CURRENTS; NANODOTS; PHOTODETECTORS; PHOTOLUMINESCENCE; THIN FILMS; TITANIUM DIOXIDE;

GLANCING ANGLE DEPOSITION TECHNIQUE; GREEN LIGHT; GREEN LIGHT EMISSION; LOW-LEAKAGE CURRENT; RED-SHIFTED; XENON LAMPS;

SILICON COMPOUNDS;

EID: 84920657009     PISSN: None     EISSN: 19342608     Source Type: Journal    
DOI: 10.1117/1.JNP.8.083069     Document Type: Article

References (13)

1. S. O. Kasap, Optoelectronics and Photonics, Principles and Practices, Prentice Hall, New Jersey (2001).
2. D. Bayerl and E. Kioupakis, "Indium nitride nanowires for efficient light emitters," SPIE Newsroom (2014).
3. G. Cheng et al., "Electronic properties of InN nanowires," Appl. Phys. Lett. 87, 253103 (2005).
4. Y.-L. Chang and Z. Mi, "Molecular beam epitaxial growth, fabrication, and characterization of InN/Si nanowire heterojunction solar cells," Proc. SPIE 7602, 76020A (2010).
5. C. Soci et al., "ZnO nanowire UV photodetectors with high internal gain," Nano Lett. 7, 1003-1009 (2007).
6. S. R. Schofield et al., "Quantum engineering at the silicon surface using dangling bonds," Nat. Commun. 4, 1649-1-1649-7 (2013).
7. 2 films by electron irradiation," Appl. Phys. Lett. 82(7), 1108-1110 (2003).
8. 3 matrix," IEEE J. Quantum Electron. 48 (5), 628-634 (2012).
9. 2 axial heterostructure nanowire arrays," J. Appl. Phys. 113(17), 174304 (2013).
10. M. Ray et al., "Silicon and silicon oxide core-shell nanoparticles: structural and photoluminescence characteristics," J. Appl. Phys. 105, 074301 (2009).
11. A. Mondal et al., "Ordered Si/Si-O nanowire array and its optical properties," Appl. Phys. A. 110(2), 479-485 (2013).
12. Y. S. Liu et al., "Transparent p-type AlN:SnO2 and p-AlN:SnO2/n-SnO2:In2O3 p-n junction fabrication," Appl. Phys. Lett. 101, 122107 (2012).
13. x nanowire arrays," IEEE Photonic Technol. Lett. 24(22), 2020-2023 (2012).