Temperature dependent transport characteristics of graphene/n-Si diodes

Journal of Applied Physics

Volumn 116, Issue 24, 2014, Pages

  Parui, S ^a,b   Ruiter, R ^a   Zomer, P J ^a   Wojtaszek, M ^a   Van Wees, B J ^a   Banerjee, T ^a  

^a UNIVERSITY OF GRONINGEN   (Netherlands)

^b CIC NANOGUNE   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RECTIFIERS; GRAPHENE; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR METAL BOUNDARIES;

ELECTRICAL CHARACTERISTIC; ELECTRICAL TRANSPORT; EXFOLIATED GRAPHENE; POTENTIAL FLUCTUATIONS; REVERSE LEAKAGE CURRENT; SCHOTTKY BARRIER HEIGHTS; TEMPERATURE DEPENDENT; TRANSPORT CHARACTERISTICS;

GRAPHENE DEVICES;

EID: 84920151524     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.4905110     Document Type: Article

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