-
1
-
-
80052091908
-
High efficiency selective emitter cells using patterned ion implantation
-
C.E. Dube, B. Tsefrekas, D. Buzby, R. Tavares, W. Zhang, A. Gupta, R.J. Low, W. Skinner, J. Mullin, High efficiency selective emitter cells using patterned ion implantation, Energy Procedia 8 (2011) 706-711.
-
(2011)
Energy Procedia
, vol.8
, pp. 706-711
-
-
Dube, C.E.1
Tsefrekas, B.2
Buzby, D.3
Tavares, R.4
Zhang, W.5
Gupta, A.6
Low, R.J.7
Skinner, W.8
Mullin, J.9
-
2
-
-
80052099445
-
Very low emitter saturation current densities on ion implanted boron emitters
-
Valencia, Spain
-
J. Benick, N. Bateman, M. Hermle, Very low Emitter Saturation Current Densities on Ion Implanted Boron Emitters, in: Proceedings of the 25th European PV Solar Energy Conference, Valencia, Spain, (2010).
-
(2010)
th European PV Solar Energy Conference
-
-
Benick, J.1
Bateman, N.2
Hermle, M.3
-
3
-
-
84884669724
-
Progress in surface passivation of heavily doped n-type and p-type silicon by plasma-deposited alo x/sinx dielectric stacks
-
S. Duttagupta, F.J. Ma, S.F. Lin, T. Mueller, A.G. Aberle, B. Hoex, Progress in surface passivation of heavily doped n-type and p-type silicon by plasma-deposited AlO x/SiNx dielectric stacks, IEEE Journal of Photovoltaics 3 (2013) 1163-1169.
-
(2013)
IEEE Journal of Photovoltaics
, vol.3
, pp. 1163-1169
-
-
Duttagupta, S.1
Ma, F.J.2
Lin, S.F.3
Mueller, T.4
Aberle, A.G.5
Hoex, B.6
-
4
-
-
77949658591
-
Progress in the surface passivation of silicon solar cells
-
Valencia, Spain
-
J. Schmidt, A. Merkle, R. Bock, P.P. Altermatt, A. Cuevas, N.-P. Harder, B. Hoex, R. van de Sanden, E. Kessels, R. Brendel, Progress in the surface passivation of silicon solar cells, in: Proceedings of the 23rd European Photovoltaic Solar Energy Conference, Valencia, Spain, (2008).
-
(2008)
rd European Photovoltaic Solar Energy Conference
-
-
Schmidt, J.1
Merkle, A.2
Bock, R.3
Altermatt, P.P.4
Cuevas, A.5
Harder, N.-P.6
Hoex, B.7
Sanden, R.V.D.8
Kessels, E.9
Brendel, R.10
-
5
-
-
0037884583
-
Light-induced degradation at the silicon/silicon dioxide interface
-
P.E. Gruenbaum, R.A. Sinton, R.M. Swanson, Light-induced degradation at the silicon/silicon dioxide interface, Applied Physics Letters 52 (1988) 1407-1409.
-
(1988)
Applied Physics Letters
, vol.52
, pp. 1407-1409
-
-
Gruenbaum, P.E.1
Sinton, R.A.2
Swanson, R.M.3
-
6
-
-
77955430802
-
Back-contact back-junction silicon solar cells under UV illumination
-
F. Granek, C. Reichel, Back-contact back-junction silicon solar cells under UV illumination, Solar Energy Materials and Solar Cells 94 (2010) 1734-1740.
-
(2010)
Solar Energy Materials and Solar Cells
, vol.94
, pp. 1734-1740
-
-
Granek, F.1
Reichel, C.2
-
7
-
-
70449657630
-
Analysis of the current linearity at low illumination of high-efficiency back-junction back-contact silicon solar cells
-
F. Granek, M. Hermle, S.W. Glunz Analysis of the current linearity at low illumination of high-efficiency back-junction back-contact silicon solar cells, Physica Status Solidi RRL 2 (2008) 151-153.
-
(2008)
Physica Status Solidi RRL
, vol.2
, pp. 151-153
-
-
Granek, F.1
Hermle, M.2
Glunz, S.W.3
-
8
-
-
84881221959
-
Back-contacted back-junction n-type silicon solar cells featuring an insulating thin film for decoupling charge carrier collection and metallization geometry
-
C. Reichel, F. Granek, M. Hermle, S.W. Glunz, Back-contacted back-junction n-type silicon solar cells featuring an insulating thin film for decoupling charge carrier collection and metallization geometry, Progress in Photovoltaics: Research and Applications 21 (2013) 1063-1076.
-
(2013)
Progress in Photovoltaics: Research and Applications
, vol.21
, pp. 1063-1076
-
-
Reichel, C.1
Granek, F.2
Hermle, M.3
Glunz, S.W.4
-
9
-
-
84868593551
-
Very low surface recombination velocity of boron doped emitter passivated with plasma-enhanced chemical-vapor-deposited alox layers
-
P. Saint-Cast, A. Richter, E. Billot, M. Hofmann, J. Benick, J. Rentsch, R. Preu, S.W. Glunz, Very low surface recombination velocity of boron doped emitter passivated with plasma-enhanced chemical-vapor-deposited AlOx layers, Thin Solid Films 522 (2012) 336-339.
-
(2012)
Thin Solid Films
, vol.522
, pp. 336-339
-
-
Saint-Cast, P.1
Richter, A.2
Billot, E.3
Hofmann, M.4
Benick, J.5
Rentsch, J.6
Preu, R.7
Glunz, S.W.8
-
10
-
-
18644375512
-
Numerical modeling of highly doped si: P emitters based on fermi-dirac statistics and self-consistent material parameters
-
P.P. Altermatt, J.O. Schumacher, A. Cuevas, S.W. Glunz, R.R. King, G. Heiser, A. Schenk, Numerical modeling of highly doped Si:P emitters based on Fermi-Dirac statistics and self-consistent material parameters, Journal of Applied Physics 92 (2002) 3187-3197.
-
(2002)
Journal of Applied Physics
, vol.92
, pp. 3187-3197
-
-
Altermatt, P.P.1
Schumacher, J.O.2
Cuevas, A.3
Glunz, S.W.4
King, R.R.5
Heiser, G.6
Schenk, A.7
-
11
-
-
0022306789
-
Measurement of the emitter saturation current by a contactless photoconductivity decay method (silicon solar cells)
-
Las Vegas, Nevada, USA
-
D.E. Kane, R.M. Swanson, Measurement of the emitter saturation current by a contactless photoconductivity decay method (silicon solar cells), in: Proceedings of the 18th IEEE Photovoltaic Specialists Conference, Las Vegas, Nevada, USA, (1985).
-
(1985)
th IEEE Photovoltaic Specialists Conference
-
-
Kane, D.E.1
Swanson, R.M.2
-
12
-
-
83455236144
-
Surface passivation of phosphorus-diffused n+-type emitters by plasma-assisted atomic-layer deposited al2o3
-
B. Hoex, M.C.M. van de Sanden, J. Schmidt, R. Brendel, W.M.M. Kessels, Surface passivation of phosphorus-diffused n+-type emitters by plasma-assisted atomic-layer deposited Al2O3, Physica Status Solidi RRL 6 (2012) 4-6.
-
(2012)
Physica Status Solidi RRL
, vol.6
, pp. 4-6
-
-
Hoex, B.1
Van De Sanden, M.C.M.2
Schmidt, J.3
Brendel, R.4
Kessels, W.M.M.5
|