-
1
-
-
0032516155
-
A Silicon-Based Nuclear Spin Quantum Computer
-
Kane, B. E. A Silicon-Based Nuclear Spin Quantum Computer Nature 1998, 393, 133-137
-
(1998)
Nature
, vol.393
, pp. 133-137
-
-
Kane, B.E.1
-
2
-
-
0034226818
-
Electron-Spin-Resonance Transistors for Quantum Computing in Silicon-Germanium Heterostructures
-
Vrijen, R.; Yablonovitch, E.; Wang, K.; Jiang, H. W.; Balandin, A.; Roychowdhury, V.; Mor, T.; Divincenzo, D. Electron-Spin-Resonance Transistors for Quantum Computing in Silicon-Germanium Heterostructures Phys. Rev. A 2000, 62, 012306-1-10
-
(2000)
Phys. Rev. A
, vol.62
, pp. 01230601-01230610
-
-
Vrijen, R.1
Yablonovitch, E.2
Wang, K.3
Jiang, H.W.4
Balandin, A.5
Roychowdhury, V.6
Mor, T.7
Divincenzo, D.8
-
3
-
-
2142820066
-
Charge-Based Quantum Computing Using Single Donors in Semiconductors
-
Hollenberg, L. C.; Dzurak, A. S.; Wellard, C.; Hamilton, A. R.; Reilly, D. J.; Milburn, G. J.; Clark, R. G. Charge-Based Quantum Computing Using Single Donors in Semiconductors Phys. Rev. B 2004, 69, 113301-1-4
-
(2004)
Phys. Rev. B
, vol.69
, pp. 1133011-1133014
-
-
Hollenberg, L.C.1
Dzurak, A.S.2
Wellard, C.3
Hamilton, A.R.4
Reilly, D.J.5
Milburn, G.J.6
Clark, R.G.7
-
4
-
-
3543054152
-
Stable Solid-State Source of Single Photons
-
Kurtsiefer, C.; Mayer, S.; Zarda, P.; Weinfurter, H. Stable Solid-State Source of Single Photons Phys. Rev. Lett. 2000, 85, 290-293
-
(2000)
Phys. Rev. Lett.
, vol.85
, pp. 290-293
-
-
Kurtsiefer, C.1
Mayer, S.2
Zarda, P.3
Weinfurter, H.4
-
5
-
-
33244475094
-
Time-Resolved Photoluminescence Spectroscopy of Individual Te Impurity Centers in ZnSe
-
Muller, A.; Bianucci, P.; Piermarocchi, C.; Fornari, M.; Robin, I. C.; André, R.; Shih, C. K. Time-Resolved Photoluminescence Spectroscopy of Individual Te Impurity Centers in ZnSe Phys. Rev. B 2006, 73, 081306-1-4
-
(2006)
Phys. Rev. B
, vol.73
, pp. 0813061-0813064
-
-
Muller, A.1
Bianucci, P.2
Piermarocchi, C.3
Fornari, M.4
Robin, I.C.5
André, R.6
Shih, C.K.7
-
6
-
-
36049043188
-
Single Photon Emission from Individual Nitrogen Pairs in GaP
-
Ikezawa, M.; Sakuma, Y.; Masumoto, Y. Single Photon Emission from Individual Nitrogen Pairs in GaP Jpn. J. Appl. Phys. 2007, 46, L871-L873
-
(2007)
Jpn. J. Appl. Phys.
, vol.46
, pp. 871-L873
-
-
Ikezawa, M.1
Sakuma, Y.2
Masumoto, Y.3
-
7
-
-
0037152804
-
Quantum Optical Studies on Individual Acceptor Bound Excitons in a Semiconductor
-
Strauf, S.; Michler, P.; Klude, M.; Hommel, D.; Bacher, G.; Forchel, A. Quantum Optical Studies on Individual Acceptor Bound Excitons in a Semiconductor Phys. Rev. Lett. 2002, 89, 177403-1-4
-
(2002)
Phys. Rev. Lett.
, vol.89
, pp. 1774031-1774034
-
-
Strauf, S.1
Michler, P.2
Klude, M.3
Hommel, D.4
Bacher, G.5
Forchel, A.6
-
8
-
-
0001003609
-
Room Temperature Stable Single-Photon Source
-
Beveratos, A.; Kühn, S.; Brouri, R.; Gacoin, T.; Poizat, J.-P.; Grangier, P. Room Temperature Stable Single-Photon Source Eur. Phys. J. D 2002, 18, 191-196
-
(2002)
Eur. Phys. J. D
, vol.18
, pp. 191-196
-
-
Beveratos, A.1
Kühn, S.2
Brouri, R.3
Gacoin, T.4
Poizat, J.-P.5
Grangier, P.6
-
9
-
-
79251518049
-
Single Dopants in Semiconductors
-
Koenraad, P. M.; Flatté, M. E. Single Dopants in Semiconductors Nat. Mater. 2001, 10, 91-100
-
(2001)
Nat. Mater.
, vol.10
, pp. 91-100
-
-
Koenraad, P.M.1
Flatté, M.E.2
-
10
-
-
77951069162
-
2
-
2 Nano Lett. 2012, 10, 1271-1275
-
(2012)
Nano Lett.
, vol.10
, pp. 1271-1275
-
-
Splendiani, A.1
Sun, L.2
Zhang, Y.3
Li, T.4
Kim, J.5
Chim, C.-Y.6
Galli, G.7
Wang, F.8
-
13
-
-
84863325332
-
Valley-Selective Circular Dichroism of Monolayer Molybdenum Disulphide
-
Cao, T.; Wang, G.; Han, W.; Ye, H.; Zhu, C.; Shi, J.; Niu, Q.; Tan, P.; Wang, E.; Liu, B.; Feng, J. Valley-Selective Circular Dichroism of Monolayer Molybdenum Disulphide Nat. Commun. 2012, 3, 887-1-5
-
(2012)
Nat. Commun.
, vol.3
, pp. 8871-8875
-
-
Cao, T.1
Wang, G.2
Han, W.3
Ye, H.4
Zhu, C.5
Shi, J.6
Niu, Q.7
Tan, P.8
Wang, E.9
Liu, B.10
Feng, J.11
-
15
-
-
84884246363
-
Defects Activated Photoluminescence in Two-Dimensional Semiconductors: Interplay between Bound, Charged, and Free Excitons
-
Tongay, S.; Suh, J.; Ataca, C.; Fan, W.; Luce, A.; Kang, J. S.; Liu, J.; Ko, C.; Raghunathanan, R.; Zhou, J.; Ogletree, F.; Li, J.; Grossman, J. C.; Wua, J. Defects Activated Photoluminescence in Two-Dimensional Semiconductors: Interplay between Bound, Charged, and Free Excitons Sci. Rep. 2013, 3, 2657-1-5
-
(2013)
Sci. Rep.
, vol.3
, pp. 26571-26575
-
-
Tongay, S.1
Suh, J.2
Ataca, C.3
Fan, W.4
Luce, A.5
Kang, J.S.6
Liu, J.7
Ko, C.8
Raghunathanan, R.9
Zhou, J.10
Ogletree, F.11
Li, J.12
Grossman, J.C.13
Wua, J.14
-
16
-
-
84881566687
-
2 Monolayers
-
2 Monolayers Nano Lett. 2012, 13, 3447-3454
-
(2012)
Nano Lett.
, vol.13
, pp. 3447-3454
-
-
Gutiérrez, H.R.1
Perea-López, N.2
Elías, A.L.3
Berkdemir, A.4
Wang, B.5
Lv, R.6
López-Urías, F.7
Crespi, V.H.8
Terrones, H.9
Terrones, M.10
-
17
-
-
84872845513
-
2
-
2 ACS Nano 2013, 7, 791-797
-
(2013)
ACS Nano
, vol.7
, pp. 791-797
-
-
Zhao, W.1
Ghorannevis, Z.2
Chu, L.3
Toh, M.4
Kloc, C.5
Tan, P.-H.6
Eda, G.7
-
18
-
-
0001512375
-
Experimental Proof of the Existence of a New Electronic Complex in Silicon
-
Haynes, J. R. Experimental Proof of the Existence of a New Electronic Complex in Silicon Phys. Rev. Lett. 1960, 4, 361-363
-
(1960)
Phys. Rev. Lett.
, vol.4
, pp. 361-363
-
-
Haynes, J.R.1
-
20
-
-
33645933910
-
Temperature Dependence of the LO Phonon Sidebands in Free Exciton Emission of GaN
-
Xua, S. J.; Li, G. Q.; Xiong, S.-J.; Che, C. M. Temperature Dependence of the LO Phonon Sidebands in Free Exciton Emission of GaN J. Appl. Phys. 2006, 99, 073508-1-5
-
(2006)
J. Appl. Phys.
, vol.99
, pp. 0735081-0735085
-
-
Xua, S.J.1
Li, G.Q.2
Xiong, S.-J.3
Che, C.M.4
-
21
-
-
0000905694
-
Luminescence Linewidths of Excitons in GaAs Quantum Wells below 150 K
-
Lee, J.; Koteles, E. S.; Vassell, M. O. Luminescence Linewidths of Excitons in GaAs Quantum Wells below 150 K Phys. Rev. B 1986, 33, 5512-5516
-
(1986)
Phys. Rev. B
, vol.33
, pp. 5512-5516
-
-
Lee, J.1
Koteles, E.S.2
Vassell, M.O.3
-
22
-
-
49949133713
-
Temperature Dependence of the Energy Gap in Semiconductors
-
Varshni, Y. P. Temperature Dependence of the Energy Gap in Semiconductors Physica 1967, 34, 149-154
-
(1967)
Physica
, vol.34
, pp. 149-154
-
-
Varshni, Y.P.1
-
23
-
-
84872248053
-
Temperature Dependence of Photoluminescence Spectra in Hole-Doped Single-Walled Carbon Nanotubes: Implications of Trion Localization
-
Mouri, S.; Miyauchi, Y.; Iwamura, M.; Matsuda, K. Temperature Dependence of Photoluminescence Spectra in Hole-Doped Single-Walled Carbon Nanotubes: Implications of Trion Localization Phys. Rev. B 2013, 87, 045408-1-4
-
(2013)
Phys. Rev. B
, vol.87
, pp. 0454081-0454084
-
-
Mouri, S.1
Miyauchi, Y.2
Iwamura, M.3
Matsuda, K.4
-
24
-
-
0000826060
-
Thermalization Effect on Radiative Decay of Excitons in Quantum Wires
-
Akiyama, H.; Koshiba, S.; Someya, T.; Wada, K.; Noge, H.; Nakamura, Y.; Inoshita, T.; Shimizu, A.; Sakaki, H. Thermalization Effect on Radiative Decay of Excitons in Quantum Wires Phys. Rev. Lett. 1994, 72, 924-927
-
(1994)
Phys. Rev. Lett.
, vol.72
, pp. 924-927
-
-
Akiyama, H.1
Koshiba, S.2
Someya, T.3
Wada, K.4
Noge, H.5
Nakamura, Y.6
Inoshita, T.7
Shimizu, A.8
Sakaki, H.9
-
25
-
-
0043004198
-
Photoluminescence Studies of Excitonic Transitions in GaN Epitaxial Layers
-
Viswanath, A. K.; Lee, J. I.; Yu, S.; Kim, D.; Choi, Y.; Hong, C.-H. Photoluminescence Studies of Excitonic Transitions in GaN Epitaxial Layers J. Appl. Phys. 1998, 84, 3848-3859
-
(1998)
J. Appl. Phys.
, vol.84
, pp. 3848-3859
-
-
Viswanath, A.K.1
Lee, J.I.2
Yu, S.3
Kim, D.4
Choi, Y.5
Hong, C.-H.6
-
26
-
-
12444303205
-
Excitonic Fine Structure and Recombination Dynamics in Single-Crystalline ZnO
-
Teke, A.; Özgür, Ü.; Dogan, S.; Gu, X.; Morkoç, H.; Nemeth, B.; Nause, J.; Everitt, H. O. Excitonic Fine Structure and Recombination Dynamics in Single-Crystalline ZnO Phys. Rev. B 2004, 70, 195207-1-10
-
(2004)
Phys. Rev. B
, vol.70
, pp. 19520701-19520710
-
-
Teke, A.1
Özgür, U.2
Dogan, S.3
Gu, X.4
Morkoç, H.5
Nemeth, B.6
Nause, J.7
Everitt, H.O.8
-
28
-
-
80052090759
-
Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors
-
Liu, L.; Kumar, S. B.; Ouyang, Y.; Guo, J. Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors IEEE Trans. Electron Devices 2011, 58, 3042-3047
-
(2011)
IEEE Trans. Electron Devices
, vol.58
, pp. 3042-3047
-
-
Liu, L.1
Kumar, S.B.2
Ouyang, Y.3
Guo, J.4
|