메뉴 건너뛰기




Volumn 8, Issue 12, 2014, Pages 12777-12785

Optical detection of a highly localized impurity state in monolayer tungsten disulfide

Author keywords

bound exciton; impurity state; photoluminescence; transition metal dichalcogenide

Indexed keywords

EXCITONS; PHOTOLUMINESCENCE; QUANTUM COMPUTERS; QUANTUM OPTICS; SEMICONDUCTOR QUANTUM WELLS; SULFUR COMPOUNDS; TEMPERATURE; TRANSITION METALS; TUNGSTEN COMPOUNDS;

EID: 84919741412     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn5059858     Document Type: Article
Times cited : (26)

References (28)
  • 1
    • 0032516155 scopus 로고    scopus 로고
    • A Silicon-Based Nuclear Spin Quantum Computer
    • Kane, B. E. A Silicon-Based Nuclear Spin Quantum Computer Nature 1998, 393, 133-137
    • (1998) Nature , vol.393 , pp. 133-137
    • Kane, B.E.1
  • 6
    • 36049043188 scopus 로고    scopus 로고
    • Single Photon Emission from Individual Nitrogen Pairs in GaP
    • Ikezawa, M.; Sakuma, Y.; Masumoto, Y. Single Photon Emission from Individual Nitrogen Pairs in GaP Jpn. J. Appl. Phys. 2007, 46, L871-L873
    • (2007) Jpn. J. Appl. Phys. , vol.46 , pp. 871-L873
    • Ikezawa, M.1    Sakuma, Y.2    Masumoto, Y.3
  • 7
    • 0037152804 scopus 로고    scopus 로고
    • Quantum Optical Studies on Individual Acceptor Bound Excitons in a Semiconductor
    • Strauf, S.; Michler, P.; Klude, M.; Hommel, D.; Bacher, G.; Forchel, A. Quantum Optical Studies on Individual Acceptor Bound Excitons in a Semiconductor Phys. Rev. Lett. 2002, 89, 177403-1-4
    • (2002) Phys. Rev. Lett. , vol.89 , pp. 1774031-1774034
    • Strauf, S.1    Michler, P.2    Klude, M.3    Hommel, D.4    Bacher, G.5    Forchel, A.6
  • 9
    • 79251518049 scopus 로고    scopus 로고
    • Single Dopants in Semiconductors
    • Koenraad, P. M.; Flatté, M. E. Single Dopants in Semiconductors Nat. Mater. 2001, 10, 91-100
    • (2001) Nat. Mater. , vol.10 , pp. 91-100
    • Koenraad, P.M.1    Flatté, M.E.2
  • 18
    • 0001512375 scopus 로고
    • Experimental Proof of the Existence of a New Electronic Complex in Silicon
    • Haynes, J. R. Experimental Proof of the Existence of a New Electronic Complex in Silicon Phys. Rev. Lett. 1960, 4, 361-363
    • (1960) Phys. Rev. Lett. , vol.4 , pp. 361-363
    • Haynes, J.R.1
  • 20
    • 33645933910 scopus 로고    scopus 로고
    • Temperature Dependence of the LO Phonon Sidebands in Free Exciton Emission of GaN
    • Xua, S. J.; Li, G. Q.; Xiong, S.-J.; Che, C. M. Temperature Dependence of the LO Phonon Sidebands in Free Exciton Emission of GaN J. Appl. Phys. 2006, 99, 073508-1-5
    • (2006) J. Appl. Phys. , vol.99 , pp. 0735081-0735085
    • Xua, S.J.1    Li, G.Q.2    Xiong, S.-J.3    Che, C.M.4
  • 21
    • 0000905694 scopus 로고
    • Luminescence Linewidths of Excitons in GaAs Quantum Wells below 150 K
    • Lee, J.; Koteles, E. S.; Vassell, M. O. Luminescence Linewidths of Excitons in GaAs Quantum Wells below 150 K Phys. Rev. B 1986, 33, 5512-5516
    • (1986) Phys. Rev. B , vol.33 , pp. 5512-5516
    • Lee, J.1    Koteles, E.S.2    Vassell, M.O.3
  • 22
    • 49949133713 scopus 로고
    • Temperature Dependence of the Energy Gap in Semiconductors
    • Varshni, Y. P. Temperature Dependence of the Energy Gap in Semiconductors Physica 1967, 34, 149-154
    • (1967) Physica , vol.34 , pp. 149-154
    • Varshni, Y.P.1
  • 23
    • 84872248053 scopus 로고    scopus 로고
    • Temperature Dependence of Photoluminescence Spectra in Hole-Doped Single-Walled Carbon Nanotubes: Implications of Trion Localization
    • Mouri, S.; Miyauchi, Y.; Iwamura, M.; Matsuda, K. Temperature Dependence of Photoluminescence Spectra in Hole-Doped Single-Walled Carbon Nanotubes: Implications of Trion Localization Phys. Rev. B 2013, 87, 045408-1-4
    • (2013) Phys. Rev. B , vol.87 , pp. 0454081-0454084
    • Mouri, S.1    Miyauchi, Y.2    Iwamura, M.3    Matsuda, K.4
  • 25
    • 0043004198 scopus 로고    scopus 로고
    • Photoluminescence Studies of Excitonic Transitions in GaN Epitaxial Layers
    • Viswanath, A. K.; Lee, J. I.; Yu, S.; Kim, D.; Choi, Y.; Hong, C.-H. Photoluminescence Studies of Excitonic Transitions in GaN Epitaxial Layers J. Appl. Phys. 1998, 84, 3848-3859
    • (1998) J. Appl. Phys. , vol.84 , pp. 3848-3859
    • Viswanath, A.K.1    Lee, J.I.2    Yu, S.3    Kim, D.4    Choi, Y.5    Hong, C.-H.6
  • 28
    • 80052090759 scopus 로고    scopus 로고
    • Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors
    • Liu, L.; Kumar, S. B.; Ouyang, Y.; Guo, J. Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors IEEE Trans. Electron Devices 2011, 58, 3042-3047
    • (2011) IEEE Trans. Electron Devices , vol.58 , pp. 3042-3047
    • Liu, L.1    Kumar, S.B.2    Ouyang, Y.3    Guo, J.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.