Van der Waals epitaxy and characterization of hexagonal boron nitride nanosheets on graphene

Nanoscale Research Letters

Volumn 9, Issue 1, 2014, Pages 1-7

  Song, Yangxi ^a   Zhang, Changrui ^a   Li, Bin ^a   Ding, Guqiao ^b   Jiang, Da ^b   Wang, Haomin ^b   Xie, Xiaoming ^b  

^a NATIONAL UNIVERSITY OF DEFENSE TECHNOLOGY   (China)

^b SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

Chemical vapor deposition; Graphene; Hexagonal boron nitride; Nanosheets; van der Waals epitaxy

Indexed keywords

BORON NITRIDE; CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; III-V SEMICONDUCTORS; LOW-K DIELECTRIC; MORPHOLOGY; NANOSHEETS; NITRIDES; SILICA; VAN DER WAALS FORCES;

ENVIRONMENTAL INFLUENCES; EXFOLIATED GRAPHENE; EXPERIMENTAL CONDITIONS; HEXAGONAL BORON NITRIDE; HEXAGONAL BORON NITRIDE (H-BN); SUPER-LATTICE STRUCTURES; TRIANGULAR MORPHOLOGY; VAN DER WAALS EPITAXY;

GRAPHENE;

EID: 84919679759     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-9-367     Document Type: Article

References (36)

1. Novoselov KS, Geim AK, Morozov SV, Jiang D, Zhang Y, Dubonos SV, Grigorieva IV, Firsov AA: Electric field effect in atomically thin carbon films. Science 2004, 306: 666-669.
2. Novoselov KS, Jiang D, Schedin F, Booth TJ, Khotkevich VV, Morozov SV, Geim AK: Two-dimensional atomic crystals. Proc Natl Acad Sci U S A 2005, 102: 10451-10453.
3. Wang L, Chen Z, Dean CR, Taniguchi T, Watanabe K, Brus LE, Hone J: Negligible environmental sensitivity of graphene in a hexagonal boron nitride/graphene/h-BN sandwich structure. ACS Nano 2012, 6: 9314-9319.
4. Han Q, Yan B, Gao T, Meng J, Zhang Y, Liu Z, Wu X, Yu D: Boron nitride film as a buffer layer in deposition of dielectrics on graphene. Small 2014, 10: 2293-2299.
5. Watanabe K, Taniguchi T, Kanda H: Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal. Nat Mater 2004, 3: 404-409.
6. Kubota Y, Watanabe K, Tsuda O, Taniguchi T: Deep ultraviolet light-emitting hexagonal boron nitride synthesized at atmospheric pressure. Science 2007, 317: 932-934.
7. Guo N, Wei J, Jia Y, Sun H, Wang Y, Zhao K, Shi X, Zhang L, Li X, Cao A, Hongwei Z, Kunlin W, Dehai W: Fabrication of large area hexagonal boron nitride thin films for bendable capacitors. Nano Res 2013, 6: 602-610.
8. Meng X-L, Lun N, Qi Y-X, Zhu H-L, Han F-D, Yin L-W, Fan R-H, Bai Y-J, Bi J-Q: Simple synthesis of mesoporous boron nitride with strong cathodoluminescence emission. J Solid State Chem 2011, 184: 859-862.
9. Kim KK, Hsu A, Jia X, Kim SM, Shi Y, Dresselhaus M, Palacios T, Kong J: Synthesis and characterization of hexagonal boron nitride film as a dielectric layer for graphene devices. ACS Nano 2012, 6: 8583-8590.
10. Sachdev H, Müller F, Hüfner S: BN analogues of graphene: on the formation mechanism of boronitrene layers - solids with extreme structural anisotropy. Diam Relat Mater 2010, 19: 1027-1033.
11. Gannett W, Regan W, Watanabe K, Taniguchi T, Crommie MF, Zettl A: Boron nitride substrates for high mobility chemical vapor deposited graphene. Appl Phys Lett 2011, 98: 242105.
12. Dean CR, Young AF, Meric I, Lee C, Wang L, Sorgenfrei S, Watanabe K, Taniguchi T, Kim P, Shepard KL, Hone J: Boron nitride substrates for high-quality graphene electronics. Nat Nanotechnol 2010, 5: 722-726.
13. Lee KH, Shin HJ, Lee J, Lee IY, Kim GH, Choi JY, Kim SW: Large-scale synthesis of high-quality hexagonal boron nitride nanosheets for large-area graphene electronics. Nano Lett 2012, 12: 714-718.
14. Shi Y, Hamsen C, Jia X, Kim KK, Reina A, Hofmann M, Hsu AL, Zhang K, Li H, Juang ZY, Dresselhaus MS, Li L-J, Kong J: Synthesis of few-layer hexagonal boron nitride thin film by chemical vapor deposition. Nano Lett 2010, 10: 4134-4139.
15. 3. Chem Mater 2004, 16: 343-345.
16. Lee Y-H, Liu K-K, Lu A-Y, Wu C-Y, Lin C-T, Zhang W, Su C-Y, Hsu C-L, Lin T-W, Wei K-H, Shi Y, Li L-J: Growth selectivity of hexagonal-boron nitride layers on Ni with various crystal orientations. RSC Adv 2012, 2: 111-115.
17. Kim KK, Hsu A, Jia X, Kim SM, Shi Y, Hofmann M, Nezich D, Rodriguez-Nieva JF, Dresselhaus M, Palacios T, Kong J: Synthesis of monolayer hexagonal boron nitride on Cu foil using chemical vapor deposition. Nano Lett 2012, 12: 161-166.
18. Song L, Ci L, Lu H, Sorokin PB, Jin C, Ni J, Kvashnin AG, Kvashnin DG, Lou J, Yakobson BI, Ajayan PM: Large scale growth and characterization of atomic hexagonal boron nitride layers. Nano Lett 2010, 10: 3209-3215.
19. Guo N, Wei J, Fan L, Jia Y, Liang D, Zhu H, Wang K, Wu D: Controllable growth of triangular hexagonal boron nitride domains on copper foils by an improved low-pressure chemical vapor deposition method. Nanotechnology 2012, 23: 415605.
20. Yan K, Peng H, Zhou Y, Li H, Liu Z: Formation of bilayer Bernal graphene: layer-by-layer epitaxy via chemical vapor deposition. Nano Lett 2011, 11: 1106-1110.
21. 2layers using graphene as growth templates. Nano Lett 2012, 12: 2784-2791.
22. Hwang J, Kim M, Campbell D, Alsalman HA, Kwak JY, Shivaraman S, Woll AR, Singh AK, Hennig RG, Gorantla S: van der Waals epitaxial growth of graphene on sapphire by chemical vapor deposition without a metal catalyst. ACS Nano 2012, 7: 385-395.
23. J-s L, C-r Z, Li B, Cao F, Wang SQ: An investigation on the synthesis of borazine. Inorg Chim Acta 2011, 366: 173-176.
24. J-s L, C-r Z, Li B, Cao F, Wang SQ: An improved synthesis of borazine with aluminum chloride as catalyst. Eur J Inorg Chem 2010, 2010: 1763-1766.
25. Lima MP, Fazzio A, da Silva AJR: Edge effects in bilayer graphene nanoribbons: ab initio total-energy density functional theory calculations. Phys Rev B 2009, 79: 153401.
26. Calizo I, Balandin A, Bao W, Miao F, Lau C: Temperature dependence of the Raman spectra of graphene and graphene multilayers. Nano Lett 2007, 7: 2645-2649.
27. Tan PH, Dimovski S, Gogotsi Y: Raman scattering of non-planar graphite: arched edges, polyhedral crystals, whiskers and cones. Phil Trans R Soc Lond A 2004, 362: 2289-2310.
28. Tan PH, Deng YM, Zhao Q, Cheng WC: The intrinsic temperature effect of the Raman spectra of graphite. Appl Phys Lett 1999, 74: 1818.
29. Li JS, Zhang CR, Li B: Preparation and characterization of boron nitride coatings on carbon fibers from borazine by chemical vapor deposition. Appl Surf Sci 2011, 257: 7752-7757.
30. Zhang XW, Boyen HG, Deyneka N, Ziemann P, Banhart F, Schreck M: Epitaxy of cubic boron nitride on (001)-oriented diamond. Nat Mater 2003, 2: 312-315.
31. Allen MJ, Tung VC, Kaner RB: Honeycomb carbon: a review of graphene. Chem Rev 2009, 110: 132-145.
32. Tang S, Ding G, Xie X, Chen J, Wang C, Ding X, Huang F, Lu W, Jiang M: Nucleation and growth of single crystal graphene on hexagonal boron nitride. Carbon 2012, 50: 329-331.
33. Nagashima A, Tejima N, Gamou Y, Kawai T, Oshima C: Electronic dispersion relations of monolayer hexagonal boron nitride formed on the Ni(111) surface. Phys Rev B 1995, 51: 4606-4613.
34. Wang W-L, Bi J-Q, Sun W-X, Zhu H-L, Xu J-J, Zhao M-T, Bai Y-J: Facile synthesis of boron nitride coating on carbon nanotubes. Mater Chem Phys 2010, 122: 129-132.
35. Ci L, Song L, Jin C, Jariwala D, Wu D, Li Y, Srivastava A, Wang ZF, Storr K, Balicas L, Liu F, Ajayan PM: Atomic layers of hybridized boron nitride and graphene domains. Nat Mater 2010, 9: 430-435.
36. Yue J, Cheng W, Zhang X, He D, Chen G: Ternary BCN thin films deposited by reactive sputtering. Thin Solid Films 2000, 375: 247-250.