Gated hall effect of nanoplate devices reveals surface-state-induced surface inversion in iron pyrite semiconductor

Nano Letters

Volumn 14, Issue 12, 2014, Pages 6754-6760

  Liang, Dong ^a   Cabán Acevedo, Miguel ^a   Kaiser, Nicholas S ^a   Jin, Song ^a  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

Author keywords

Gated Hall effect; iron pyrite; nanoplate devices; solar energy conversion; surface inversion; surface states

Indexed keywords

ELECTROLYTES; ENERGY CONVERSION; HALL EFFECT; HETEROJUNCTIONS; IRON; NANOSTRUCTURES; POISSON EQUATION; SEMICONDUCTING FILMS; SEMICONDUCTOR DEVICES; SOLAR ENERGY; SURFACE STATES; TRANSPORT PROPERTIES;

ELECTRICAL TRANSPORT PROPERTIES; GENERAL METHODOLOGIES; HALL MEASUREMENTS; NANO-PLATE; P-TYPE CONDUCTIVITY; SEMI-CONDUCTOR SURFACES; STRONG INVERSION; TRANSPORT MEASUREMENTS;

PYRITES;

EID: 84916604703     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl501942w     Document Type: Article

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