메뉴 건너뛰기




Volumn 136, Issue 47, 2014, Pages 16609-16617

Quantitative correlation between defect density and heterogeneous electron transfer rate of single layer graphene

Author keywords

[No Author keywords available]

Indexed keywords

CRITICAL CURRENT DENSITY (SUPERCONDUCTIVITY); DEFECT DENSITY; DEFECTS; ELECTRON TRANSITIONS; ELECTRONIC STATES; ELECTRONIC STRUCTURE; SCANNING ELECTRON MICROSCOPY; SCANNING PROBE MICROSCOPY; VACANCIES;

EID: 84914145748     PISSN: 00027863     EISSN: 15205126     Source Type: Journal    
DOI: 10.1021/ja508965w     Document Type: Article
Times cited : (230)

References (64)
  • 52
    • 0003957648 scopus 로고
    • Eyring, H. Henderson, D. Jost, W. Academic Press, Inc. New York
    • Gerischer, H. In Physical Chemistry: An Advanced Treatise; Eyring, H.; Henderson, D.; Jost, W., Eds.; Academic Press, Inc.: New York, 1970; Vol. 9A.
    • (1970) Physical Chemistry: An Advanced Treatise , vol.9
    • Gerischer, H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.