Surface modification of CIGS film by annealing and its effect on the band structure and photovoltaic properties of CIGS solar cells

Current Applied Physics

Volumn 15, Issue 1, 2015, Pages 18-24

  Shin, Young Min ^a   Lee, Chang Soo ^a   Shin, Dong Hyeop ^a   Kwon, Hyuck Sang ^a   Park, Byong Guk ^a   Ahn, Byung Tae ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

CIGS film annealing; CIGS solar cells; Hole blocking layer; Reproducible cells

Indexed keywords

GALLIUM; OPEN CIRCUIT VOLTAGE; PHOTOVOLTAIC EFFECTS; POINT DEFECTS; RAPID THERMAL ANNEALING; SOLAR CELLS; SOLAR POWER GENERATION; SURFACE DEFECTS;

CIGS FILMS; CIGS SOLAR CELLS; FABRICATION TECHNIQUE; HOLE BLOCKING LAYERS; PHOTOVOLTAIC PROPERTY; SURFACE RECOMBINATIONS; SURFACE-INTRINSIC LAYERS; VALENCE-BAND MAXIMUMS;

COPPER;

EID: 84912557593     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2014.09.023     Document Type: Article

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