Characterization of silicon-germanium epitaxial layer by photoluminescence intensity and reflectance measurement techniques

Journal of Nanoscience and Nanotechnology

Volumn 14, Issue 12, 2014, Pages 8999-9004A

  Back, Dohyun ^a   Lee, Jaehyeong ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

Characterization; Misfit dislocations; Photoluminescence (PL); SiGe

Indexed keywords

CARRIER LIFETIME; CHARACTERIZATION; DEFECT DENSITY; DISLOCATIONS (CRYSTALS); EPITAXIAL LAYERS; GERMANIUM; HETEROJUNCTIONS; LANTHANUM COMPOUNDS; SURFACE DEFECTS;

GE FRACTION; MINORITY CARRIER LIFETIMES; PHOTOLUMINESCENCE INTENSITIES; PL INTENSITY; ROOM TEMPERATURE; SIGE; SILICON GERMANIUM; SURFACE CONDITIONS;

PHOTOLUMINESCENCE;

GERMANIUM; SILICON;

CHEMISTRY; LUMINESCENCE; SURFACE PROPERTY;

GERMANIUM; LUMINESCENCE; SILICON; SURFACE PROPERTIES;

EID: 84911407861     PISSN: 15334880     EISSN: 15334899     Source Type: Journal    
DOI: 10.1166/jnn.2014.10063     Document Type: Article

References (21)

1. K. Zaghib, P. Charest, A. Guerfi, J. Shim, M. Perrier, and K. Striebel, J. Power Sources 146, 380 (2005).
2. J. M. Tarascon and M. Armand, Nature 414, 359 (2001).
3. C. M. Doherty, R. A. Caruso, B. M. Smarsly, P. Adelhelm, and C. J. Drummond, Chem. Mater. 21, 5300 (2009).
4. K. Saravanan, M. V. Reddy, P. Balaya, H. Gong, B. V. R. Chowdari, and J. J. Vittal, J. Mater. Chem. 19, 605 (2009).
5. S. Y. Lim, C. S. Yoon, and J. P. Cho, Chem. Mater. 20, 4560 (2008).
6. J. Zhao, J. He, J. Zhou, Y. Guo, T. Wang, S. Wu, X. Ding, R. Huang, and H. Xue, J. Phys. Chem. C 115, 2888 (2011).
7. A. McWhorter, Semiconductor Surface Physics, Univerisity of Pennsylvania Press, Philadelphia, PA (1957), pp. 207-228.
8. D. J. Paul, Semicond. Sci. Technol. 19, R75 (2004).
9. Pathfinder Research Inc. SiGe Advances in the Marketplace (2003).
10. J. W. Matthews and A. E. Blakeslee, J. Cryst. Growth 32, 265 (1976).
11. J. Oh, K. Jeon, S.-H. Lee, J. Huang, P. Y. Hung, I. Ok, B. Sassman, D.-H. Ko, P. Krish, and R. Jammy, Microelectronic Eng. 97, 26 (2012).
12. C. G. Pantano, Secondary ion mass spectroscopy, Metals Handbook, 9th edn., edited by R. E. Whan, coord., Am. Soc. Metals, Metals Park, OH (1986), Vol. 10, p. 610.
13. H. B. Bebb and E. W. Williams, Photoluminescence I: Theory in Semiconductors and Semimetals, edited by R. K. Willardson and A. C. Beer, Academic Press, New York (1972), Vol. 8, p. 181;
14. E. W. Williams and H. B. Bebb, Photoluminescence II: Gallium Arsenide, ibid. p. 321.
15. Y. H. Luo, J. Wan, R. L. Forrest, J. L. Liu, M. S. Goorsky, and K. L. Wang, J. Appl. Phys. 89, 8279 ( 2001).
16. S. W. Lee, H. C. Chen, L. J. Chen, Y. H. Peng, C. H. Kuan, and H. H. Cheng, J. Appl. Phys. 92, 6880 ( 2002).
17. S. J. Robinson, S. R. Wenhan, P. P. Altermatt, A. G. Aberle, G. Heiser, and M. A. Green, J. Appl. Phys. 78, 4740 (1995).
18. SiPHER, Bio-Rad Semiconductor System Divisions (recently Accent Optical Technologies).
19. D. H. Baek, S. B. Kim, and D. K. Schroder, J. Appl. Phys. 104, 054503 (2008).
20. D. Baek, S. Rouvimov, B. Kim, T.-C, Jo, and D. K. Schroder, Appl. Phys. Lett. 86, 112110 (2005).
21. S. Mahajan and K. S. SreeHarsha, Principles of Growth and Processing of Semiconductors, Boston, WCB/McGraw-Hill (1999).