Epitaxial silicon minority carrier diffusion length by photoluminescence

Journal of Applied Physics

Volumn 104, Issue 5, 2008, Pages

  Baek, D H ^a   Kim, S B ^b   Schroder, D K ^a  

^a Arizona State University   (United States)

^b SUMCO USA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CIVIL AVIATION; EPILAYERS; EPITAXIAL GROWTH; EPITAXIAL LAYERS; LIGHT EMISSION; LUMINESCENCE; MOLECULAR BEAM EPITAXY; NONMETALS; OPTICAL ENGINEERING; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SILICON; SILICON WAFERS; SURFACE DIFFUSION;

CONTACTLESS; DOPING DENSITIES; EPITAXIAL SILICON; EXPERIMENTAL DATA; HEAVILY DOPING; MINORITY CARRIER DIFFUSION LENGTH; PHOTOLUMINESCENCE (PL); ROOM TEMPERATURES; SUBSTRATE DOPING; SURFACE RECOMBINATION VELOCITIES;

SUBSTRATES;

EID: 51849088100     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2973461     Document Type: Article

References (8)

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