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Solid State Sciences

Volumn 38, Issue , 2014, Pages 156-159

Monte-Carlo simulation of microwave noise in n-type InSb

(3) Ašmontas, Steponas a Raguotis, Romas a Bumeliene, Skaidra a

a CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY (Lithuania)

Author keywords

Compensated semiconductor; InSb; Monte Carlo; Noise temperature

Indexed keywords

ELECTRIC FIELDS; ELECTROMAGNETIC WAVE SCATTERING; ELECTRON DENSITY MEASUREMENT; ELECTRON GAS; ELECTRON SCATTERING; III-V SEMICONDUCTORS; INDIUM ANTIMONIDES; MONTE CARLO METHODS; NARROW BAND GAP SEMICONDUCTORS; SEMICONDUCTING ANTIMONY COMPOUNDS; TEMPERATURE DISTRIBUTION;

DELOCALIZATIONS; ELECTRIC FIELD STRENGTH; ELECTRON-ELECTRON SCATTERING; INSB; LATTICE TEMPERATURES; MICROWAVE NOISE; MONTE CARLO CALCULATION; NOISE TEMPERATURE;

ELECTRONS;

EID: 84910662098 PISSN: 12932558 EISSN: None Source Type: Journal
DOI: 10.1016/j.solidstatesciences.2014.10.014 Document Type: Article

Times cited : (3)

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