Monte Carlo analysis of electronic noise in semiconductor materials and devices

Microelectronics Journal

Volumn 28, Issue 2, 1997, Pages 183-198

  Reggiani, L ^a   Golinelli, P ^b   Varani, L ^c   Gonzalez T ^d   Pardo, D ^d   Starikov, E ^e   Shiktorov, P ^e   Gruzinskis V ^e  

^a INFM   (Italy)

^b UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^c UNIVERSITÉ MONTPELLIER II   (France)

^d UNIVERSITY OF SALAMANCA   (Spain)

^e CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELDS; MESFET DEVICES; MONTE CARLO METHODS; RESISTORS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR MATERIALS;

ELECTRONIC NOISE; SEMICONDUCTOR UNIPOLAR STRUCTURES;

SPURIOUS SIGNAL NOISE;

EID: 0031078226     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2692(96)00061-4     Document Type: Review

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