-
1
-
-
84876100812
-
Uniform methodology for benchmarking beyond-CMOS logic devices
-
Nikonov, D. E.; Young, I. A. Uniform methodology for benchmarking beyond-CMOS logic devices IEEE Int. Electron Devices Meet. 2012, 25.4.1-25.4.4
-
(2012)
IEEE Int. Electron Devices Meet.
, pp. 2541-2544
-
-
Nikonov, D.E.1
Young, I.A.2
-
2
-
-
40449116091
-
Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices
-
Salahuddin, S.; Datta, S. Use of Negative Capacitance To Provide Voltage Amplification for Low Power Nanoscale Devices Nano Lett. 2007, 8 (2) 405-410
-
(2007)
Nano Lett.
, vol.8
, Issue.2
, pp. 405-410
-
-
Salahuddin, S.1
Datta, S.2
-
3
-
-
84860539115
-
A low-voltage high-speed electronic switch based on piezoelectric transduction
-
Newns, D.; Elmegreen, B.; Hu Liu, X.; Martyna, G. A low-voltage high-speed electronic switch based on piezoelectric transduction J. Appl. Phys. 2012, 111 (8) 084509
-
(2012)
J. Appl. Phys.
, vol.111
, Issue.8
, pp. 084509
-
-
Newns, D.1
Elmegreen, B.2
Hu Liu, X.3
Martyna, G.4
-
4
-
-
78649983189
-
Quest of the Next Switch: Prospects for Greatly Reduced Power Dissipation in a Successor to the Silicon Field-Effect Transistor
-
Theis, T. N.; Solomon, P. M. Quest of the Next Switch: Prospects for Greatly Reduced Power Dissipation in a Successor to the Silicon Field-Effect Transistor Proc. IEEE 2010, 98 (12) 2005-2014
-
(2010)
Proc. IEEE
, vol.98
, Issue.12
, pp. 2005-2014
-
-
Theis, T.N.1
Solomon, P.M.2
-
5
-
-
84887625662
-
On the possibility of sub 60 mV/decade subthreshold switching in piezoelectric gate barrier transistors
-
Jana, R. K.; Snider, G. L.; Jena, D. On the possibility of sub 60 mV/decade subthreshold switching in piezoelectric gate barrier transistors Phys. Status Solidi C 2013, 10 (11) 1469-1472
-
(2013)
Phys. Status Solidi C
, vol.10
, Issue.11
, pp. 1469-1472
-
-
Jana, R.K.1
Snider, G.L.2
Jena, D.3
-
6
-
-
84906549034
-
The Piezoelectric Transformer Field Effect Transistor
-
Agarwal, S.; Yablonovitch, E. The Piezoelectric Transformer Field Effect Transistor Device Res. Conf. 2014, 25-26
-
(2014)
Device Res. Conf.
, pp. 25-26
-
-
Agarwal, S.1
Yablonovitch, E.2
-
9
-
-
81555212275
-
Giant Piezoelectricity on Si for Hyperactive MEMS
-
Baek, S. H.; Park, J.; Kim, D. M.; Aksyuk, V. A.; Das, R. R.; Bu, S. D.; Felker, D. A.; Lettieri, J.; Vaithyanathan, V.; Bharadwaja, S. S. N.; Bassiri-Gharb, N.; Chen, Y. B.; Sun, H. P.; Folkman, C. M.; Jang, H. W.; Kreft, D. J.; Streiffer, S. K.; Ramesh, R.; Pan, X. Q.; Trolier-McKinstry, S.; Schlom, D. G.; Rzchowski, M. S.; Blick, R. H.; Eom, C. B. Giant Piezoelectricity on Si for Hyperactive MEMS Science 2011, 334 (6058) 958-961
-
(2011)
Science
, vol.334
, Issue.6058
, pp. 958-961
-
-
Baek, S.H.1
Park, J.2
Kim, D.M.3
Aksyuk, V.A.4
Das, R.R.5
Bu, S.D.6
Felker, D.A.7
Lettieri, J.8
Vaithyanathan, V.9
Bharadwaja, S.S.N.10
Bassiri-Gharb, N.11
Chen, Y.B.12
Sun, H.P.13
Folkman, C.M.14
Jang, H.W.15
Kreft, D.J.16
Streiffer, S.K.17
Ramesh, R.18
Pan, X.Q.19
Trolier-Mckinstry, S.20
Schlom, D.G.21
Rzchowski, M.S.22
Blick, R.H.23
Eom, C.B.24
more..
-
10
-
-
0031211577
-
Ultrahigh strain and piezoelectric behavior in relaxor based ferroelectric single crystals
-
Park, S.-E.; Shrout, T. R. Ultrahigh strain and piezoelectric behavior in relaxor based ferroelectric single crystals J. Appl. Phys. 1997, 82 (4) 1804-1811
-
(1997)
J. Appl. Phys.
, vol.82
, Issue.4
, pp. 1804-1811
-
-
Park, S.-E.1
Shrout, T.R.2
-
12
-
-
33748892269
-
Ferroelectric thin films: Review of materials, properties, and applications
-
Setter, N.; Damjanovic, D.; Eng, L.; Fox, G.; Gevorgian, S.; Hong, S.; Kingon, A.; Kohlstedt, H.; Park, N. Y.; Stephenson, G. B.; Stolitchnov, I.; Taganstev, A. K.; Taylor, D. V.; Yamada, T.; Streiffer, S. Ferroelectric thin films: Review of materials, properties, and applications J. Appl. Phys. 2006, 100, 051606
-
(2006)
J. Appl. Phys.
, vol.100
, pp. 051606
-
-
Setter, N.1
Damjanovic, D.2
Eng, L.3
Fox, G.4
Gevorgian, S.5
Hong, S.6
Kingon, A.7
Kohlstedt, H.8
Park, N.Y.9
Stephenson, G.B.10
Stolitchnov, I.11
Taganstev, A.K.12
Taylor, D.V.13
Yamada, T.14
Streiffer, S.15
-
13
-
-
80052804532
-
Ferroelectricity in hafnium oxide thin films
-
Böscke, T. S.; Müller, J.; Bräuhaus, D.; Schröder, U.; Böttger, U. Ferroelectricity in hafnium oxide thin films Appl. Phys. Lett. 2011, 99 (10) 102903
-
(2011)
Appl. Phys. Lett.
, vol.99
, Issue.10
, pp. 102903
-
-
Böscke, T.S.1
Müller, J.2
Bräuhaus, D.3
Schröder, U.4
Böttger, U.5
-
14
-
-
84910129316
-
-
COMSOL AB: Stockholm, Sweden, (accessed June 1, 2014)
-
Comsol Multiphysics 4.4 Material Database, COMSOL AB: Stockholm, Sweden, 2014, (accessed June 1, 2014).
-
(2014)
Comsol Multiphysics 4.4 Material Database
-
-
-
15
-
-
77957915736
-
3
-
3 Phys. Rev. Lett. 2010, 105 (16) 167601
-
(2010)
Phys. Rev. Lett.
, vol.105
, Issue.16
, pp. 167601
-
-
Highland, M.J.1
Fister, T.T.2
Richard, M.-I.3
Fong, D.D.4
Fuoss, P.H.5
Thompson, C.6
Eastman, J.A.7
Streiffer, S.K.8
Stephenson, G.B.9
-
16
-
-
84891967930
-
-
Springer-Verlag: Berlin, Berlin
-
Tichy, J.; Erhart, J.; Kittinger, E.; Privratska, J. Fundamentals of Piezoelectric Sensorics: Mechanical, Dielectric, and Thermodynamical Properties of Piezoelectric Materials; Springer-Verlag: Berlin, Berlin, 2010; pp 1-207.
-
(2010)
Fundamentals of Piezoelectric Sensorics: Mechanical, Dielectric, and Thermodynamical Properties of Piezoelectric Materials
, pp. 1-207
-
-
Tichy, J.1
Erhart, J.2
Kittinger, E.3
Privratska, J.4
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