Pressure variation of Rashba spin splitting toward topological transition in the polar semiconductor BiTeI

Physical Review B - Condensed Matter and Materials Physics

Volumn 90, Issue 16, 2014, Pages

  Ideue, T ^a   Checkelsky, J G ^b   Bahramy, M S ^a,c   Murakawa, H ^d   Kaneko, Y ^c   Nagaosa, N ^a,c   Tokura, Y ^a,c  

^a UNIVERSITY OF TOKYO   (Japan)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^c RIKEN Center for Emergent Matter Science   (Japan)

^d OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84908428683     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.90.161107     Document Type: Article

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