Pressure tuning the Fermi level through the Dirac point of giant Rashba semiconductor BiTeI

Journal of Physics Condensed Matter

Volumn 26, Issue 34, 2014, Pages

  Vangennep, D ^a   Maiti, S ^a,b   Graf, D ^b   Tozer, S W ^b   Martin, C ^a,c   Berger, H ^d   Maslov, D L ^a   Hamlin, J J ^a  

^a University of Florida   (United States)

^b FLORIDA STATE UNIVERSITY   (United States)

^c RAMAPO COLLEGE OF NEW JERSEY   (United States)

^d EPFL   (Switzerland)

Author keywords

Dirac point; high pressure; non centrosymmetric; quantum phase transition; Rashba; topological insulator

Indexed keywords

CALCULATIONS; CONDUCTION BANDS; FERMI SURFACE; PHASE TRANSITIONS; TOPOLOGY;

DIRAC POINT; HIGH PRESSURE; NON-CENTROSYMMETRIC; QUANTUM PHASE TRANSITIONS; RASHBA; TOPOLOGICAL INSULATORS;

CHEMICAL POTENTIAL;

EID: 84905841574     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/26/34/342202     Document Type: Article

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