Tuning the band gap in silicene by oxidation

ACS Nano

Volumn 8, Issue 10, 2014, Pages 10019-10025

  Du, Yi ^a   Zhuang, Jincheng ^a   Liu, Hongsheng ^c   Xu, Xun ^a   Eilers, Stefan ^a   Wu, Kehui ^b   Cheng, Peng ^b   Zhao, Jijun ^c   Pi, Xiaodong ^d   See, Khay Wai ^a   Peleckis, Germanas ^a   Wang, Xiaolin ^a   Dou, Shi Xue ^a  

^a UNIVERSITY OF WOLLONGONG   (Australia)

^b INSTITUTE OF PHYSICS   (China)

^c BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

^d ZHEJIANG UNIVERSITY   (China)

Author keywords

band gap; DFT calculation; oxidation; silicene; STM

Indexed keywords

ADATOMS; CALCULATIONS; GRAPHENE; MONOLAYERS; OXIDATION; OXYGEN; SCANNING TUNNELING MICROSCOPY; SILICENE; SILICON COMPOUNDS; TEMPERATURE; TUNING;

AG(111) SURFACE; BAND GAP ENGINEERING; DFT CALCULATION; ELECTRONIC MATERIALS; FIRST-PRINCIPLES CALCULATION; IN-SITU RAMAN SPECTROSCOPY; LOW-TEMPERATURE SCANNING TUNNELING MICROSCOPY; OXYGEN ADATOMS;

ENERGY GAP;

EID: 84908423983     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn504451t     Document Type: Article

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