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Volumn 105, Issue 3, 2014, Pages

Semi-empirical device model for Cu2ZnSn(S,Se)4 solar cells

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SOFTWARE; EFFICIENCY;

EID: 84908257900     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4890844     Document Type: Article
Times cited : (82)

References (28)
  • 11
    • 84925854644 scopus 로고    scopus 로고
    • Ph.D. thesis, Colorado State University
    • M. Gloeckler, Ph.D. thesis, Colorado State University, 2005.
    • (2005)
    • Gloeckler, M.1
  • 19
    • 84925856510 scopus 로고    scopus 로고
    • See supplementary material at http://dx.doi.org/10.1063/1.4890844 E-APPLAB-105-094429 for the list of device models and a wxAMPS compatible device file for model #303.
  • 25
    • 84925863479 scopus 로고    scopus 로고
    • For the CZTSSe layer, a dielectric constant of 8 is used in the model, and this number is consistent with the experimentally measured values in the bandgarange of interest (Ref. 19).
    • For the CZTSSe layer, a dielectric constant of 8 is used in the model, and this number is consistent with the experimentally measured values in the bandgap range of interest (Ref. 19).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.