|
Volumn , Issue , 1998, Pages 568-571
|
Selectively grown vertical Si p-MOS transistor with reduced overlap capacitances
|
Author keywords
[No Author keywords available]
|
Indexed keywords
CAPACITANCE;
EPITAXIAL GROWTH;
FIELD EFFECT TRANSISTORS;
PHOTOLITHOGRAPHY;
SILICON;
BLANKET EPITAXY;
CHANNEL LENGTH;
CHANNEL REGION;
HIGH INTEGRATION DENSITY;
HIGH-SPEED APPLICATIONS;
LATERAL DIMENSION;
OVERLAP CAPACITANCE;
SHORT CHANNELS;
SEMICONDUCTING SILICON;
|
EID: 84907905901
PISSN: 19308876
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (2)
|
References (7)
|