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Volumn , Issue , 1998, Pages 568-571

Selectively grown vertical Si p-MOS transistor with reduced overlap capacitances

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; EPITAXIAL GROWTH; FIELD EFFECT TRANSISTORS; PHOTOLITHOGRAPHY; SILICON;

EID: 84907905901     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (2)

References (7)
  • 2
    • 67349228275 scopus 로고    scopus 로고
    • Recent progress with vertical transistors
    • Stuttgart
    • L. Risch., Th. Aeugle and W. ROsner, "Recent Progress With Vertical Transistors", Proceedings of ESSDERC 97, Stuttgart, pp. 34-41
    • Proceedings of ESSDERC , vol.97 , pp. 34-41
    • Risch, L.1    Aeugle Th.2    Rosner, W.3
  • 3
    • 0028405278 scopus 로고
    • Vertical si-meta1- oxide-semiconductor field effect transistor with channel lengths of 50 run by molecular beam epitaxy
    • H. Gossner, I. Eisele, L. Risch: "Vertical Si-Meta1- Oxide-Semiconductor Field Effect Transistor with Channel Lengths of 50 run by Molecular Beam Epitaxy", Japanese Journal of Applied Physics, 1994, 33( 4)B, pp. 2423-2428
    • (1994) Japanese Journal of Applied Physics , vol.33 , Issue.4 B , pp. 2423-2428
    • Gossner, H.1    Eisele, I.2    Risch, L.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.