Vertical Si p-MOS transistor selectively grown by low pressure chemical vapour deposition

Thin Solid Films

Volumn 294, Issue 1-2, 1997, Pages 267-270

  Loo, R ^a   Vescan, L ^a   Behammer, D ^b   Moers, J ^a   Grabolla, T ^c   Langen, W ^a   Klaes, D ^a   Zastrow, U ^a   Kordos, P ^a   Luth H ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b RUHR UNIVERSITY BOCHUM   (Germany)

^c IHP   (Germany)

Author keywords

Channel length; Low pressure chemical vapor deposition; pn junctions; Si p MOS transistor

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; TRANSCONDUCTANCE;

LOW PRESSURE CHEMICAL VAPOR DEPOSITION;

MOS DEVICES;

EID: 0031073115     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)09464-3     Document Type: Article

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