Improved method for the oxide thickness extraction in MOS structures with ultra-thin gate dielectrics

IEEE International Conference on Microelectronic Test Structures

Volumn , Issue , 1999, Pages 111-116

  Ghibaudo, G ^a   Bruyere, S ^a   Devoivre, T ^a   DeSalvo, B ^a   Vincent, E ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; DIELECTRIC DEVICES; GATES (TRANSISTOR); STATISTICAL METHODS;

OXIDE THICKNESS EXTRACTION; ULTRA-THIN GATE DIELECTRICS;

CMOS INTEGRATED CIRCUITS;

EID: 0032677409     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (4)