Anisotropic magnetoresistance in an antiferromagnetic semiconductor

Nature Communications

Volumn 5, Issue , 2014, Pages

  Fina, I ^a,b   Marti, X ^c,d,e   Yi, D ^c   Liu, J ^f   Chu, J H ^f   Rayan Serrao, C ^c   Suresha, S ^g   Shick, A B ^e   Zelezny J ^e   Jungwirth, T ^e,h   Fontcuberta, J ^a   Ramesh, R ^c,f,g,i  

^a INSTITUT DE CIÈNCIA DE MATERIALS DE BARCELONA ICMAB CSIC   (Spain)

^b MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^c University of California Berkeley   (United States)

^d CATALAN INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY ICN2   (Spain)

^e INSTITUTE OF PHYSICS   (Czech Republic)

^f UNIVERSITY OF CALIFORNIA   (United States)

^g LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^h UNIVERSITY OF NOTTINGHAM   (United Kingdom)

ⁱ OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ELECTRODE; ELECTRONIC EQUIPMENT; EXPERIMENTAL STUDY; GEOMETRY; MATHEMATICAL ANALYSIS; MEASUREMENT METHOD; SEMICONDUCTOR INDUSTRY; TEMPERATURE EFFECT;

AB INITIO CALCULATION; ANISOTROPY; ANTIFERROMAGNETIC SEMICONDUCTOR; ARTICLE; ELECTRODE; GEOMETRY; MAGNETIC FIELD; OBSERVATIONAL STUDY; SEMICONDUCTOR;

EID: 84907857344     PISSN: None     EISSN: 20411723     Source Type: Journal    
DOI: 10.1038/ncomms5671     Document Type: Article

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